锑基硫族薄膜太阳能电池缺陷研究进展  

Progress on defects of antimony chalcogenide thin film solar cells

作　　者：赵宇琪 李建民 肖旭东 Yuqi Zhao;Jianmin Li;Xudong Xiao(Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education,School of Physics and Technology,Wuhan University,Wuhan 430072,China)

机构地区：[1]武汉大学物理科学与技术学院,人工微结构教育部重点实验室,武汉430072

出　　处：《科学通报》2023年第31期4135-4151,共17页Chinese Science Bulletin

基　　金：国家自然科学基金(62204174);湖北省自然科学基金(2022CFB683)资助。

摘　　要：锑硫族化合物(Sb_(2)(S_(x)Se_(1-x))_(3),0≤x≤1)薄膜具有带隙在1.1~1.7 eV范围内连续可调、光电性能优异、化学性质稳定以及元素含量丰富无毒等优点,被认为是一种极具发展前景的低成本太阳能电池吸收层材料.自2009年以来,Sb_(2)(S_(x)Se_(1-x))_(3)薄膜太阳能电池光电转换效率稳步提升并超过10%,展现出其作为新兴薄膜太阳能电池的巨大潜力.当前限制Sb_(2)(S_(x)Se_(1-x))_(3)薄膜太阳能电池效率进一步提升的一个重要因素是由于材料本身复杂的固有缺陷带来的低载流子浓度和严重的载流子复合.了解材料的缺陷性质以及Sb_(2)(S_(x)Se_(1-x))_(3)薄膜的缺陷调控对进一步提升器件转换效率具有重要意义.本文结合Sb_(2)(S_(x)Se_(1-x))_(3)材料的缺陷特性,详细讨论了近年来关于Sb_(2)(S_(x)Se_(1-x))_(3)太阳能电池的缺陷调控措施,主要包括通过掺杂提高Sb_(2)(S_(x)Se_(1-x))_(3)导电性和载流子浓度、生长过程中的缺陷控制以及后钝化处理等,并对未来Sb_(2)(S_(x)Se_(1-x))_(3)太阳能电池的研究方向进行了展望.As a kind of new photovoltaic materials,antimony chalcogenide(Sb_2(S_xSe_(1-x))_3,0≤x≤1)thin films have been considered as a promising low-cost solar cell absorption layer material due to its excellent photoelectric performance and stability.Since the Nair group first applied Sb_2S_(3)materials to sensitized structured solar cells in 2009,the preparation method and device structure of Sb_2(S_xSe_(1-x))_(3)have been continuously improved,and the photoelectric conversion efficiency(PCE)has been steadily improved to 10.75%.Despite the rapid progress,the device performance of antimony chalcogenide solar cells is still far from its theoretical limit.One of the key factors limiting the PCE of Sb_2(S_xSe_(1-x))_(3)thin film solar cells is defects.Generally,due to the influence of material properties and fabrication technology,it can be expected that there will be nonnegligible defects in the absorption layer and interface of the Sb_2(S_xSe_(1-x))_(3)thin film solar cells.These defects can be formed internally or introduced externally,which have significant effects on the conductivity,carrier concentration,and recombination properties.According to the position of the defect transition level in the band gap,the influence of the defect on the properties of the semiconductor material can be divided into two aspects:(1)The defect near the band edge can contribute to the carrier concentration and adjust the Fermi level,thus determining the conduction type of the semiconductor(p-type or n-type).(2)Defects located deep in the band gap will limit the transmission of photogenerated carriers.Carriers trapped by defects deep in the band gap are extremely difficult to ionize at room temperature,leading to severe non-radiative recombination near the defects.Given the significant impact of defects on carrier transport properties and device performance,an in-depth understanding of defect properties in Sb_2(S_xSe_(1-x))_(3)materials is critical.The defect properties of Sb_2(S_xSe_(1-x))_(3)have been investigated using first-principl

关 键 词：锑硫族化合物 太阳能电池 掺杂 缺陷 

分 类 号：TM9[电气工程—电力电子与电力传动]