SrAl_(2)O_(4):Eu^(2+),Dy^(3+),Tm^(3+)荧光材料的光激励诱导长余辉特性及其防伪应用  

Photo-stimulated Long Afterglow of SrAl_(2)O_(4)∶Eu^(2+),Dy^(3+),Tm^(3+)and Its Anti-counterfeit Applications

作　　者：安欣 岳杨 朱楠楠 段伯松 何青山 徐旭辉[2] 谢俊奎 仇广宇 王婷 余雪 AN Xin;YUE Yang;ZHU Nannan;DUAN Bosong;HE Qingshan;XU Xuhui;XIE Junkui;QIU Guangyu;WANG Ting;YU Xue(School of Mechanical Engineering,Chengdu University,Chengdu 610106,China;Faculty of Materials Science and Engineering,Key Laboratory of Advanced Materials of Yunnan Province,Kunming University of Science and Technology,Kunming 650093,China;Beihai Beacon Office,South China Sea Navigation Security Center,Ministry of Transportation and Communications,Beihai 536000,China;College of Materials and Chemistry&Chemical Engineering,Chengdu University of Technology,Chengdu 610059,China)

机构地区：[1]成都大学机械工程学院,四川成都610106 [2]昆明理工大学材料科学与工程学院,云南省新材料制备与加工重点实验室,云南昆明650093 [3]交通运输部南海航海保障中心北海航标处,广西北海536000 [4]成都理工大学材料与化学化工学院,四川成都610059

出　　处：《发光学报》2023年第11期1931-1939,共9页Chinese Journal of Luminescence

基　　金：国家自然科学基金(U2241236,61965012,1220041913);四川省自然科学基金(2022YFH0108,2022JDJQ0030);云南省自然科学基金(202101AT070126)。

摘　　要：防伪技术的提升关乎国家安全和社会稳定,对于当今社会信息安全领域十分重要。光存储荧光材料由于其成本低、分辨率高和响应速度快等特点在防伪领域展现出巨大优势。然而,荧光材料防伪模式单一以及对激发波长要求较高等一系列问题,一定程度上限制了其实际应用。SrAl_(2)O_(4)∶Eu^(2+),Dy^(3+)(SAO∶Eu^(2+),Dy^(3+))作为最成功的长余辉发光材料,在弱光照明、发光涂料和道路指示标牌等领域具有广泛的应用。其长余辉现象归因于载流子在室温下受热扰动释放的过程,且依赖于有效陷阱的数量和浓度。因此,在该材料中构建陷阱将有效拓展其光存储的相关性能,一直受到关注。本文通过在光存储荧光材料SAO∶Eu^(2+),Dy^(3+)中引入Tm^(3+)离子可以调控陷阱密度及结构,在减少浅陷阱密度的同时增加了深陷阱浓度,进而有效调控载流子在陷阱中的存储与释放过程。通过980nm近红外激光诱导深陷阱释放载流子可再次被浅陷阱捕获,表现出明显的光激励长余辉发射。基于此,本工作探索了一种温度和时间维度的多模式防伪技术,实现二进制编码的读写。因此,本工作通过对SAO∶Eu^(2+),Dy^(3+)的陷阱调控实现动态防伪和光学信息存储,可拓展该荧光材料在信息安全领域的应用。The advancement of anti-counterfeiting technology is closely linked to national security and social stability,making it significantly important in todays society,particularly in the realm of information security.Optical stor⁃age fluorescent materials offer significant advantages in the field of anti-counterfeiting with the characteristics of low cost,high resolution and fast response speed.Unfortunately,the practical application of these materials is limited by the single anti-counterfeiting mode of the corresponding phosphor and the requirement for specific excita⁃tion wavelengths.Among various long afterglow phosphors,SrAl_(2)O_(4)∶Eu^(2+),Dy^(3+)(SAO∶Eu^(2+),Dy^(3+))stands out as the most successful one in low-light situations,luminous paint,road signs,and other applications.The long after⁃glow effect of SAO∶Eu2+,Dy3+is attributed to the release of the captured carriers by thermal disturbance at room temperature,and this phenomenon depends on the number and concentration of effective traps.It implies that con⁃structing the trap structure of the corresponding phosphor could effectively regulate the relevant optical storage per⁃formance.In this study,the introduction of Tm3+ions into the SAO∶Eu2+,Dy3+optical storage fluorescent material is employed to regulate the trap density and structure.This adjustment can simultaneously reduce the trap density and form a rich deep defect structure,thereby significantly impacting the storage and release of the captured carri⁃ers.By employing near-infrared laser diode excitation,the carriers released from deep traps can be captured by the shallow traps,performing photo-stimulated properties,and the subsequently long afterglow luminescence after the removal of the excitation.Consequently,a temperature-dependent multi-mode anti-counterfeiting approach is explored to realize binary coding.This work demonstrates the application of dynamic anti-counterfeiting and opti⁃cal information storage,expanding the practical application of SAO∶Eu^(2+),Dy^(3+)phosphor

关 键 词：光激励发光 长余辉 光学存储 光激励诱导长余辉 

分 类 号：O482.31[理学—固体物理]