High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating  

作　　者：Andreas BABLICH Maurice MÜLLER Rainer BORNEMANN Andreas NACHTIGAL Peter HARING BOLÍVAR 

机构地区：[1]Institute of Graphene-Based Nanotechnology,University of Siegen,Hölderlinstr.3,57076 Siegen,Germany [2]Institute of High Frequency and Quantum Electronics,University of Siegen,Hölderlinstr.3,57076 Siegen,Germany

出　　处：《Photonic Sensors》2023年第4期27-38,共12页光子传感器（英文版）

基　　金：This work has received funding from the German Description Fund for Regional Development(Grant No.EFRE0200545)for the execution of the project and from DFG(Grant No.INST 221/131-1)for utilizing the instruments of the Micro and Nanoanalytics Facility(MNaF)for microscopy.

摘　　要：Photodetectors operating at the wavelength in the visible spectrum are key components in high-performance optoelectronic systems.In this work,massive nonlinearities in amorphous silicon p-i-n photodiodes enabled by the photogating are presented,resulting in responsivities up to 744 mA/W at blue wavelengths.The detectors exhibit significant responsivity gains at optical modulation frequencies exceeding MHz and a more than 60-fold enhanced spectral response compared to the non-gated state.The detection limits down to 10.4 nW/mm^(2) and mean signal-to-noise ratio enhancements of 8.5dB are demonstrated by illuminating the sensor with an additional 6.6μW/mm^(2) red wavelength.Electro-optical simulations verify photocarrier modulation due to defect-induced field screening to be the origin of such high responsivity gains.The experimental results validate the theory and enable the development of commercially viable and complementary metal oxide semiconductor(CMOS)compatible high responsivity photodetectors operating in the visible range for low-light level imaging and detection.

关 键 词：Photogating amorphous silicon a-Si:H NONLINEARITY PHOTODETECTOR responsivity gain 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]