高质量二维WTe2薄膜的可控制备及电输运性能研究  

Controlled preparation and electrical transport properties of high quality two-dimensional WTe_(2)film

作　　者：赵新[1] 卢志红[1] 张振华 肖杨 冯金地 甘凌霄 Zhao Xin;Lu Zhihong;Zhang Zhenhua;Xiao Yang;Feng Jindi;Gan Lingxiao(Faculty of Materials Science,Wuhan University of Science and Technology,Wuhan 430081,China)

机构地区：[1]武汉科技大学材料学部,湖北武汉430081

出　　处：《武汉科技大学学报》2023年第6期418-423,共6页Journal of Wuhan University of Science and Technology

基　　金：国家自然科学基金项目(91963207)。

摘　　要：以WCl_(6)为前驱体,采用化学气相沉积法制备二维WTe_(2)薄膜材料。借助X射线衍射仪、拉曼光谱、原子力显微镜、综合物性测量系统等探究了前驱体用量对二维WTe_(2)薄膜质量的影响并对薄膜的电输运性能进行表征。结果表明,在500℃下,仅需10 min的生长时间就可以获得大面积的WTe_(2)薄膜,且薄膜厚度随前驱体用量的减少而减薄。WCl_(6)前驱体为0.6 g时所制多层二维WTe_(2)薄膜在温度为10 K、磁场强度为50000 Oe下的磁电阻率为1.54%,该磁电阻率仍未达到饱和。样品平面霍尔电阻随电场和磁场夹角变化而周期性变化,表明所制WTe_(2)薄膜具有和块体WTe_(2)相似的电输运特性。Two-dimensional WTe_(2)thin film materials were prepared via chemical vapor deposition by using WCl_(6)as precursor.The influence of precursor dosage on the quality of two-dimensional WTe_(2)thin film were investigated by X-ray diffraction,Raman spectroscopy,atomic force microscopy and comprehensive physical property measurement system,and the electrical transport properties of the film were characterized.The results show that at 500℃,a large area of WTe_(2)film can be obtained with only 10 min growth time,and the thickness of the film decreases with the decrease of precursor dosage.When the WCl_(6)precursor is 0.6 g,the magnetoresistance of the multilayer two-dimensional WTe_(2)film is 1.54%at a temperature of 10 K and a magnetic field strength of 50000 Oe,and the magnetoresistance value is still not saturated.The planar Hall resistance of the sample varies periodically with the angle between the electric field and the magnetic field,indicating that the prepared WTe_(2)film has electrical transport properties similar to those of the bulk WTe_(2).

关 键 词：二维材料 WTe_(2)薄膜 WCl_(6) 前驱体 磁电阻率 平面霍尔电阻 电输运性能 

分 类 号：O469[理学—凝聚态物理] O484[理学—电子物理学]