Etching characteristics and surface modification of InGaSnO thin films under Cl_(2)/Ar plasma  

作　　者：Young-Hee JOO Jae-Won CHOI Bo HOU Hyuck-In KWON Doo-Seung UM Chang-Il KIM 

机构地区：[1]Department of Electronic and Electrical Engineering,Chung-Ang University,Seoul 06974,Republic of Korea [2]Department of Firearms and Optics,Daeduk University,Daejeon 34111,Republic of Korea [3]School of Physics and Astronomy,Cardiff University,Cardiff CF243AA,United Kingdom [4]Department of Electrical Engineering,Sejong University,Seoul 05006,Republic of Korea

出　　处：《Plasma Science and Technology》2023年第10期91-96,共6页等离子体科学和技术（英文版）

基　　金：supported by the Chung-Ang University Research Grants in 2021;the National Research Foundation(NRF)of Korea(No.2020R1G1A1102692)。

摘　　要：Indium gallium tin oxide(IGTO)thin films have the potential for high mobility and lowtemperature processing,which makes them suitable for applications such as display backplanes and high-voltage switching devices.However,very few studies have investigated the plasmaetching characteristics of IGTO and changes in its properties after etching.In this study,the etching characteristics of IGTO were investigated using Cl_(2)/Ar plasma,and changes in surface properties were analyzed.Results showed that the etch rate increased with an increase in the proportion of Cl_(2),with the highest etch rate observed at 69 nm min^(-1)in pure Cl_(2)plasma with a gas flow rate of 100 sccm.Furthermore,increased radio-frequency power caused a rise in the etch rate,while a process pressure of 15 m Torr was optimal.The primary etching mechanism for IGTO thin films under Cl_(2)plasma was a chemical reaction,and an increased work function indicated the occurrence of defects on the surface.In addition,the etching process reduced the surface roughness of Cl_(2)-containing plasma,whereas the etching process in pure Ar plasma increased surface roughness.This study contributes to a better understanding of the plasmaetching characteristics of IGTO and changes in its properties after etching,providing valuable insights for IGTO-based applications.

关 键 词：InGaSnO Cl2-based plasma etching mechanism surface modification plasma etching 

分 类 号：TN3[电子电信—物理电子学]