基于内建自测试电路的NAND Flash测试方法  

NAND Flash Test Method Based on Built-In Self-Test Circuit

作　　者：解维坤 白月芃[3] 季伟伟 王厚军 XIE Weikun;BAI Yuepeng;JI Weiwei;WANG Houjun(School of Automation Engineering,University of Electronic Science and Technology of China,Chengdu 610097,China;China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China;Shenzhen Institute for Advanced Study,University of Electronic Science and Technology of China,Shenzhen 518110,China)

机构地区：[1]电子科技大学自动化学院,成都610097 [2]中国电子科技集团公司第五十八研究所,江苏无锡214035 [3]电子科技大学深圳高等研究院,深圳518110

出　　处：《电子与封装》2023年第11期18-24,共7页Electronics & Packaging

摘　　要：随着NAND Flash在存储器市场中的占比与日俱增,对NAND Flash的测试需求也越来越大。针对NAND Flash存储器中存在的故障类型进行讨论,并对现有测试算法进行分析,为提高故障覆盖率以及降低测试时间,对现有的March-like测试算法做出改进,改进算法比March-like算法的故障覆盖率提高了16.7%,测试时间减少了30%。完成存储器内建自测试(MBIST)电路设计,设计了FPGA最小系统板并进行板级验证,结果验证了MBIST电路以及改进的测试算法的可行性。With the share of NAND Flash in the memory market increasing,the demand for NAND Flash testing is also increasing.The types of faults present in NAND Flash memory are discussed,and the existing test algorithms are analyzed.In order to improve fault coverage rate and reduce test time,the March-like algorithm is ameliorated.Compared to March-like algorithm,the fault coverage rate of the improved one increases by 16.7%,and the test time is reduced by 30%.The memory built-in self-test(MBIST)circuit design is completed,and the FPGA minimum system board is built for board-level verification.The feasibility of the MBIST circuit and the test algorithm is verified.

关 键 词：NAND Flash 存储器内建自测试 March-like Flash故障类型 

分 类 号：TN407[电子电信—微电子学与固体电子学]