UTBB SOI MOSFETs短沟道效应抑制技术  

Suppression Technology of Short-channel Effects in UTBB SOI MOSFETs

作　　者：李曼[1,2] 张淳棠 刘安琪 姚佳飞 张珺 郭宇锋[1,2] LI Man;ZHANG Chuntang;LIU Anqi;YAO Jiafei;ZHANG Jun;GUO Yufeng(National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology,Nanjing University of Posts and Telecommunications,Nanjing,210023,CHN;College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing,210023,CHN)

机构地区：[1]南京邮电大学射频集成与微组装技术国家地方联合工程实验室,南京210023 [2]南京邮电大学集成电路科学与工程学院,南京210023

出　　处：《固体电子学研究与进展》2023年第5期392-400,共9页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61874059,61904083,62074080);江苏省自然科学基金资助项目(BK20201206);江苏省研究生科研与实践创新计划项目(KYCX20_0704)。

摘　　要：随着栅极长度、硅膜厚度以及埋氧层厚度的减小,MOS器件短沟道效应变得越来越严峻。本文首先给出了决定全耗尽绝缘体上硅短沟道效应的三种机制;然后从接地层、埋层工程、沟道工程、源漏工程、侧墙工程和栅工程等六种工程技术方面讨论了为抑制短沟道效应而引入的不同UTBB SOI MOSFETs结构,分析了这些结构能够有效抑制短沟道效应(如漏致势垒降低、亚阈值摆幅、关态泄露电流、开态电流等)的机理;而后基于这六种技术,对近年来在UTBB SOI MOSFETs短沟道效应抑制方面所做的工作进行了总结;最后对未来技术的发展进行了展望。With the gate length,the silicon thickness,and the buried oxide thickness shrinking,the short channel effects(SCEs)of MOS devices become more and more severe.First,three mechanisms determining the SCEs of fully depleted silicon-on-insulator(FD SOI)are clarified in this paper;Then,different UTBB SOI MOSFETs structures introduced to suppress SCEs are discussed from six engineering techniques,including ground plane,buried insulator engineering,channel engineering,source/drain engineering,spacer engineering and gate engineering,and it is analyzed that these structures can effectively suppress SCEs(such as drain-induced barrier lowering,subthreshold swing,off-state leakage current,on-state current,etc.);After that,based on these six technologies,the research work on the suppression of the SCEs of UTBB SOI MOSFETs in recent years is summarized;Finally,prospects for the future technology developments are presented.

关 键 词：UTBB SOI MOSFETs 短沟道效应 漏致势垒降低 埋氧层厚度 

分 类 号：TN386[电子电信—物理电子学]