一种宽光谱响应的双结单光子雪崩二极管  

Research of a Dual-junction Single Photon Avalanche Diode with Wide Spectrum Response

作　　者：刘丹璐 董杰 许唐 徐跃[1,2] LIU Danlu;DONG Jie;XU Tang;XU Yue(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing,210023,CHN;National and Local Joint Engineering Laboratory of RF integration&Micro-assembly Technology,Nanjing,210023,CHN)

机构地区：[1]南京邮电大学集成电路科学与工程学院,南京210023 [2]射频集成与微组装技术国家地方联合工程实验室,南京210023

出　　处：《固体电子学研究与进展》2023年第5期424-429,共6页Research & Progress of SSE

基　　金：国家自然科学基金面上项目(62171233,61571235);江苏省农业科技自主创新基金项目(CX(21)3062);江苏省研究生科研与实践创新计划项目(KYCX21_0714)。

摘　　要：基于180 nm BCD工艺提出了一种新型双结雪崩区的单光子雪崩二极管(SPAD)探测器,采用N阱/高压P阱/N^(+)埋层结构形成了两个垂直堆叠的PN结,高压P阱和N^(+)埋层交界面形成较深的主雪崩区,增强对近红外短波光子的探测概率;同时,N阱/高压P阱之间形成浅的次雪崩区,实现对蓝绿光的高效探测,两结同时工作能够有效扩展器件的光谱响应范围。TCAD仿真结果表明,与传统的P阱/深N阱结构相比,双结SPAD器件在300~940 nm的宽光谱范围内有更高的光子探测概率,在800 nm近红外短波段探测概率达到了20.6%。在3 V过偏压下,暗计数率为0.8 kHz,后脉冲概率为3.2%。A novel dual-junction single-photon avalanche diode(SPAD)detector structure was proposed in 180 nm BCD technology.The N-well/high-voltage P-well/N^(+)buried layer structure was used to form two vertically stacked PN junctions.The high-voltage P-well and N^(+)buried layer formed a deeper primary avalanche zone,which enhanced the detection probability of the near-infrared photons.Meanwhile,a shallow secondary avalanche region was formed by the N-well/high-voltage P-well,provided high detection efficiency for the blue and green light.Thus,the spectral response range of the device could be improved when the two junctions work simultaneously.The TCAD simulation results show that compared with the traditional P-well/deep N-well structure,the dual-junction SPAD can effectively improve the photon detection probability in wide spectral range of 300-940 nm,even reaching 20.6%at 800 nm.Furthermore,at 3 V excess bias,a low dark count rate of 0.8 kHz and afterpulsing probability of 3.2%are obtained.

关 键 词：单光子雪崩二极管(SPAD) 双结雪崩区 光子探测概率(PDP) 暗计数率(DCR) 后脉冲概率(AP) 

分 类 号：TN312.7[电子电信—物理电子学]