Fluoride passivation of ZnO electron transport layers for efcient PbSe colloidal quantum dot photovoltaics  

作　　者：Jungang He You Ge Ya Wang Mohan Yuan Hang Xia Xingchen Zhang Xiao Chen Xia Wang Xianchang Zhou Kanghua Li Chao Chen Jiang Tang 

机构地区：[1]Hubei Key Laboratory of Plasma Chemistry and Advanced Materials,Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials,School of Materials Science and Engineering,Wuhan Institute of Technology,Wuhan 430205,China [2]Wuhan National Laboratory for Optoelectronics(WNLO),School of Optical and Electronic Information,School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Frontiers of Optoelectronics》2023年第3期141-151,共11页光电子前沿（英文版）

基　　金：the National Natural Science Foundation of China(Grant No.62105110);the Wuhan Institute of Technology(No.19QD09);the Analytical and Testing Center of HUST and the facility support of the Center for Nanoscale Characterization and Devices(CNCD),WNLO-HUST.

摘　　要：Lead selenide(PbSe)colloidal quantum dots(CQDs)are suitable for the development of the next-generation of photovoltaics(PVs)because of efcient multiple-exciton generation and strong charge coupling ability.To date,the reported high-efcient PbSe CQD PVs use spin-coated zinc oxide(ZnO)as the electron transport layer(ETL).However,it is found that the surface defects of ZnO present a difculty in completion of passivation,and this impedes the continuous progress of devices.To address this disadvantage,fuoride(F)anions are employed for the surface passivation of ZnO through a chemical bath deposition method(CBD).The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment.Benefting from these improvements,PbSe CQD PVs report an efciency of 10.04%,comparatively 9.4%higher than that of devices using sol-gel(SG)ZnO as ETL.We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.

关 键 词：Zinc oxide Surface passivation Band alignment Quantum-dot solar cells 

分 类 号：TM914.4[电气工程—电力电子与电力传动]