基于泊松亮斑效应的紫外曝光制备纳米针尖阵列  

Preparation of nanoneedle arrays by UV exposure based on Poisson bright spots effect

作　　者：尹红星 毛鹏程 许冰 田士兵[2] YIN Hongxing;MAO Pengcheng;XU Bing;Tian Shibing(Analysis&Testing Center,Beijing Institute of Technology,Beijing 100081,China;Laboratory of Microfabrication,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]北京理工大学分析测试中心,北京100081 [2]中国科学院物理研究所微加工实验室,北京100190

出　　处：《实验技术与管理》2023年第10期159-165,共7页Experimental Technology and Management

基　　金：北京理工大学研究生教研教改重点项目(1770012052101)。

摘　　要：使用电子束曝光或者聚焦离子束设备制备纳米针尖,虽然精度高但不能大面积快速制备;使用紫外曝光设备可以大面积快速制备,但制备精度达不到纳米量级。该文基于泊松亮斑效应,提出在常规紫外曝光设备中制备大面积、可控的纳米针尖阵列的方法。通过调控掩膜版图形和曝光剂量得到了直径小于100 nm的光刻胶的纳米针尖阵列,然后用反应离子刻蚀将光刻胶图案转移到硅衬底上得到了直径小于50 nm、径高比达1∶10的超细纳米针尖阵列。泊松亮斑曝光能极大地提高紫外曝光机的分辨率,该方法可操作性强并可大面积制备,是一种可行的曝光技术。Due to the size of nanoneedle,high-precision equipment such as electron beam lithography(EBL)or focused ion beam(FIB)is needed to prepare nanoneedle arrays,but such equipment cannot prepare nanoneedle arrays in large areas and fast speed.UV exposure can be rapidly prepared in a large area,but the preparation accuracy cannot reach the nanometer order.In this paper,a large area and controllable nanoneedle arrays are prepared in conventional UV exposure based on Poisson bright spot.The photoresist nanoneedle arrays with a diameter of less than 100nm is obtained by adjusting the mask pattern and exposure dose.Then the photoresist pattern is transferred to the silicon substrate by reactive ion etching(RIE),and the ultra-fine nanoneedle arrays with diameter less than 50nm and diameter-height ratios up to 1∶10 are obtained.Poisson bright spot exposure can greatly improve the resolution of UV exposure machine.This method is operable and can be prepared in large area,which is a feasible exposure technology.

关 键 词：菲涅尔衍射 泊松亮斑 紫外曝光 纳米针尖阵列 

分 类 号：O439[机械工程—光学工程]