Intrinsic spin Hall resonance in Bi-based Janus monolayers  

作　　者：Lei Sun Xikui Ma Jian Liu Yangyang Li Mingwen Zhao 

机构地区：[1]School of Physics,Shandong University,Jinan 250100,China

出　　处：《Nano Research》2023年第11期12626-12632,共7页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.12074218);the Taishan Scholar Program of Shandong Province.

摘　　要：The spin Hall resonance effect(SHRE)characterized by a large spin Hall conductivity(SHC)holds immense promise for achieving spin logic and memory devices.However,the identification of a material capable of achieving intrinsic SHRE remains elusive.Herein,we present compelling evidence of intrinsic SHRE within the Bi-based Janus BiXY(X=S,Se and Te;Y=Cl,Br and I)monolayers through first-principles calculations and an effective Hamiltonian model.We attribute the unusual scenario to the warping effect in the Janus monolayers which induces a non-zero out-of-plane spin component,accompanied by additional Rashba degenerate points.Furthermore,we develop a comprehensive effective Rashba Hamiltonian,incorporating high order terms of k to accurately describe the intrinsic SHRE and establish the resilience of this phenomenon in the Janus monolayers.Our study presents a captivating platform for exploring intrinsic SHRE and opens up exciting avenues for the development of novel spintronic devices.

关 键 词：intrinsic spin Hall resonance high-term Rashba effect out-of-plane spin polarization 

分 类 号：O17[理学—数学]