Van der Waals contacted WSe_(2) ambipolar transistor for in-sensor computing  被引量:1

在线阅读下载全文

作  者:Yue Wang Haoran Sun Zhe Sheng Jianguo Dong Wennan Hu Dongsheng Tang Zengxing Zhang 

机构地区:[1]School of Microelectronics,Fudan University,Shanghai 200433,China [2]Synergetic Innovation Center for Quantum Effects and Application,Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education,School of Physics and Electronics,Hunan Normal University,Changsha 410081,China [3]National Integrated Circuit Innovation Center,No.825 Zhangheng Road,Shanghai 201203,China

出  处:《Nano Research》2023年第11期12713-12719,共7页纳米研究(英文版)

基  金:supported by the National Natural Science Foundation of China(No.62274037);the National Key Research and Development Program of China(No.2018YFA0703703);the Ministry of Science and Technology of China(No.2018YFE0118300);State Key Laboratory of ASIC&System(No.2021MS003).

摘  要:Image sensors with an in-sensor computing architecture have shown great potential in meeting the energy-efficient requirements of emergent data-intensive applications,where images are processed within the photodiode arrays.It demands the composed photodiodes are reconfigurable,which are usually achieved by ambipolar two-dimensional(2D)semiconductors.To improve the ambipolar charges injection,here we report a top-gated field-effect transistor(FET)design that is of bottom van der Waals contact via transferring ambipolar 2D WSe_(2) onto Pd/Cr source/drain electrodes.The devices exhibit nearly negligible effective barrier heights for both holes and electrons based on thermionic emission mode,and show an almost balanced on/off ratio in the p-branch and n-branch.By replacing the top gate with two aligned semi-gates,the devices can effectively function as reconfigurable photodiodes.They can be switched between PIN and NIP configurations via controlling the two semi-gates,exhibiting good linearity in terms of short-circuit current(ISC)and incident light power density.The photodiode arrays are also demonstrated for in-sensor optoelectronic convolutional image processing,showing significant potential for in-sensor computing image processors.

关 键 词:ambipolar transistor van der Waals contact reconfigurable photodiode in-senor computing 

分 类 号:TN32[电子电信—物理电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象