薄膜电致发光器件的光功率耗散特性  

Optical power dissipation characteristics of thin film electroluminescent devices

作　　者：王健[1] 张乐天[2] WANG Jian;ZHANG Le-tian(Editorial Department of Journal(Natural Science),Jilin University,Changchun 130012,China;College of Electronic Science and Engineering,Jilin University,Changchun 130012,China)

机构地区：[1]吉林大学学报(理学版)编辑部,吉林长春130012 [2]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《东北师大学报（自然科学版）》2023年第4期85-89,共5页Journal of Northeast Normal University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(62175085);吉林省科技发展计划项目(20200201296JC).

摘　　要：针对薄膜型电致发光器件中的光损耗限制器件外部量子效率问题,提出结合多层薄膜结构和经典电磁学理论,研究薄膜型电致发光器件的光功率耗散特性.分别讨论了发光层的折射率以及器件结构对器件光功率耗散特性的影响.结果表明:使用高折射率的发光层,可以显著降低器件中表面等离极化激元引起的光损耗;由于不存在波导和衬底模式,顶发射器件结构在光取出效率方面上具有优势.The optical power dissipation characteristics of thin-film electroluminescent devices were investigated by combining multilayer thin-film structures with classical electromagnetic theory.The influence of the refractive index of the emitting layer and the device structure on the optical power dissipation characteristics of the device was discussed separately.The results showed that using a high refractive index emitting layer can significantly reduce the optical loss caused by surface plasmon polaritons.Additionally,the top-emitting device structure has advantages in terms of light extraction efficiency due to the absence of waveguide and substrate modes.

关 键 词：薄膜电致发光器件 多层结构 光功率耗散特性 折射率 顶发射结构. 

分 类 号：TN383[电子电信—物理电子学]