Electrical programmable multilevel nonvolatile photonic random-access memory  

作　　者：Jiawei Meng Yaliang Gui Behrouz Movahhed Nouri Xiaoxuan Ma Yifei Zhang Cosmin-Constantin Popescu Myungkoo Kang Mario Miscuglio Nicola Peserico Kathleen Richardson Juejun Hu Hamed Dalir Volker J.Sorger 

机构地区：[1]Department of Electrical and Computer Engineering,George Washington University,Washington DC 20052,USA [2]Florida Semiconductor Institute,University of Florida,Gainesville,FL 32603,USA [3]Department of Electrical and Computer Engineering,University of Florida,Gainesville,FL 32603,USA [4]Department of Materials Science&Engineering,Massachusetts Institute of Technology,Cambridge,MA 02139,USA [5]CREOL,The College of Optics&Photonics,University of Central Florida,Orlando,FL 32816,USA

出　　处：《Light(Science & Applications)》2023年第11期2325-2334,共10页光（科学与应用)（英文版）

基　　金：This work was performed in part at the George Washington University Nanofabrication and Imaging Center(GWNIC).Thin film material analysis is supported by NIST Center for Nanoscale Science and Nanotechnology(CNST),and J.A.Woollam Co.V.J.S.is supported by AFOSR(FA9550-20-1-0193)under the Presidential Early Career Award in Science and Engineering(PECASE).

摘　　要：Photonic Random-Access Memories(P-RAM)are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links.Emerging Phase-Change Materials(PCMs)have been showed multilevel memory capability,but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges.Here we demonstrate a multistate electrically programmed low-loss nonvolatile photonic memory based on a broadband transparent phase-change material(Ge2Sb2Se5,GSSe)with ultralow absorption in the amorphous state.A zero-staticpower and electrically programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform,featuring efficient amplitude modulation up to 0.2 dB/μm and an ultralow insertion loss of total 0.12 dB for a 4-bit memory showing a 100×improved signal to loss ratio compared to other phase-change-materials based photonic memories.We further optimize the positioning of dual microheaters validating performance tradeoffs.Experimentally we demonstrate a half-a-million cyclability test showcasing the robust approach of this material and device.Low-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks,LiDAR,and sensors for example.

关 键 词：RETENTION RANDOM eliminating 

分 类 号：O43[机械工程—光学工程]