大功率半导体激光器光束质量的研究与进展  

Research and Progress of High-Power Semiconductor Lasers with High Beam Quality

作　　者：陈芬 崔碧峰 冯靖宇 郑翔瑞 陈中标 Chen Fen;Cui Bifeng;Feng Jingyu;Zheng Xiangrui;Chen Zhongbiao(Key Laboratory of Opto-Electronics Technology of Ministry of Education,Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学信息学部光电子技术教育部重点实验室,北京100124

出　　处：《激光与光电子学进展》2023年第21期18-27,共10页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(11204009);北京市自然科学基金(4142005,4182014);北京市科技计划(KM201810005025)。

摘　　要：半导体激光器作为一种理想的激光光源,具有广阔的发展前景。在激光雷达、光泵浦、光纤耦合等领域,对半导体激光器的要求除大功率以外,还需具有高光束质量。由于大功率半导体激光器自身的结构特点,侧向易出现多模态光束,严重影响侧向光束质量。因此对大功率半导体激光器侧向模式进行控制,改善侧向光束质量,已成为行业内的研究热点。从3个部分展开:锥形激光器、宽脊波导半导体激光器光束质量控制、半导体激光器散热封装结构,分类介绍了当前国内外在控制侧向光束质量方面具有代表性的研究成果与进展。Semiconductor lasers can be applied as ideal laser sources toward the development of laser and sensing technologies.For laser radar measurement,optical pumping,and fiber coupling,semiconductor lasers must have high power and high beam quality.The design of high-power semiconductor lasers promotes the easy production of multi-mode beams in the lateral direction,which decreases the lateral beam quality.Hence,the limitations induced by the lateral mode and the enhancement of the lateral beam quality of high-power semiconductor lasers have become important research topics.This paper focuses on three topics:the tapered laser,the method for the improvement of the lateral beam quality of a broad-area semiconductor laser,and the package structure of a semiconductor laser.Furthermore,the results and progress of domestic and international research on the control of the lateral beam quality are reviewed.

关 键 词：激光器 半导体激光器 侧向光束质量 侧模控制 

分 类 号：TN365[电子电信—物理电子学]