面向微流体器件封装的硅-蓝宝石异质结构超快激光微连接及接头性能  

Ultrafast laser microwelding and joint performance of silicon-sapphire heterogeneous structure for microfluidic device packaging

作　　者：胡一帆 林路禅 李铸国[1] HU Yifan;LIN Luchan;LI Zhuguo(Shanghai Key Laboratory of Materials Laser Processing and Modification,Shanghai Jiao Tong University,Shanghai,200240,China)

机构地区：[1]上海交通大学,上海市激光制造与材料改性重点实验室,上海200240

出　　处：《焊接学报》2023年第12期8-14,I0003,共8页Transactions of The China Welding Institution

基　　金：国家自然科学基金资助项目(52205398)。

摘　　要：微纳传感器件中异质材料的互连将决定器件封装的质量,进而影响器件的性能.针对硅与蓝宝石晶圆级异质互连,缺少操作简洁、绿色环保、适于大规模应用的连接技术,采用超快激光穿透连接技术,通过调整硅-蓝宝石晶圆间隙并控制能量输入,对硅与蓝宝石的连接可行性进行了探究.结果表明,在晶圆间隙小于1μm、激光功率7.5 W试验条件下,异质接头处蓝宝石与硅发生相互融合,形成3μm尺寸范围的互锁结构;同时硬脆材料异质接头处易产生的孔隙裂纹等缺陷也得到了有效抑制,通过剪切试验测得接头强度达到2.9 MPa.超快激光硅-蓝宝石异质结构的有效微连接,为大差异性硬脆材料的异质互连提供了研究基础,并在微流体器件封装中得到潜在应用.In micro/nano sensor devices,integrated heterogeneous structures can determine the quality of devices packaging,and further affect their performance.For Silicon and sapphire,the heterogeneous joining technology that is flexible,environmentally friendly and suitable for large-scale materials integration is still lacking.In this paper,the welding feasibility of silicon-sapphire is explored by ultrafast laser transmission welding technology.When the gap between silicon and sapphire is less than 1μm and the incident laser power is 7.5 W,sapphire and silicon at the heterogeneous junction can be fused with each other to form an interlocking area within width~3μm.Meanwhile,defects such as pores and cracks that could normally be introduced at the junction area during brittle materials welding have also been effectively suppressed.The joint strength measured by shear test is up to 2.9 MPa.The welding of silicon and sapphire by ultrafast laser provides an alternative for the heterogeneous interconnection of hard and brittle materials with large difference.This microwelding technology has thus shown great potential in microfluidic device packaging.

关 键 词：超快激光 蓝宝石 硅 微连接 互锁结构 

分 类 号：TG456.7[金属学及工艺—焊接]