三维集成电路中TTSV热仿真分析  

Thermal Simulation Analysis of TTSV in Three-dimensional Integrated Circuits

作　　者：伍敏君[1] WU Minjun(School of Optoelectronic and Information Technology,Zhongshan Torch Polytechnic,Zhongshan 528400,China)

机构地区：[1]中山火炬职业技术学院光电信息学院,广东中山528400

出　　处：《电工技术》2023年第21期108-110,共3页Electric Engineering

基　　金：中山火炬职业技术学院2021年度校级产学研专项课题(编号202107CXYZD06)。

摘　　要：为更好地研究三维集成电路中的热问题,以两层芯片为例,建立了一维热阻分析模型,在MATLAB软件进行建模与数值计算,分析不含热硅通孔、含热硅通孔两种情况下芯片的热特性,并将数据与COMSOL Multiphysics平台的仿真结果作对比。实验结果表明,两者数据的相对误差小于1%,说明建立的热分析模型有效且可靠,加入热硅通孔后各层芯片温度下降,更有利于三维集成电路的热传导。Aiming at effectively studying thermal problems in three-dimensional integrated circuits,a one-dimensional thermal resistance analysis model is established in this paper,taking a two-layer chip as an example.The modeling and numerical calculations are carried out in MATLAB software to analyze thermal characteristics in the two cases,i.e.,without and with thermal through silicon via,and the obtained data are compared with the simulation results of COMSOL Multiphysics platform.The experimental results show that the relative data errors of the two platforms are less than 1%,which indicates validity and reliability of the established thermal analysis model.The inclusion of TTSV can achieve reduced temperature of each chip layer,and is more beneficial to thermal conduction of 3D integrated circuits.

关 键 词：三维集成电路 热硅通孔 热分析 热仿真 

分 类 号：TN47[电子电信—微电子学与固体电子学]