HBM、CDM静电放电模型及其失效特征研究  

Research on Electrostatic Discharge Models and Failure Characteristics of HBM and CDM

作　　者：刘信 罗晓羽[2] 万永康 江徽 汪小青 LIU Xin;LUOuo Xiao-yu;WAN Yong-kang;JIANG Hui;WANG Xiao-qing(China Electronics Technology Group Corporation NO.58 Research Institute,Wuxi 214000;China Electronics Standardization Institute,Beijing 100007)

机构地区：[1]中国电子科技集团公司第五十八研究所,无锡214000 [2]中国电子技术标准化研究院,北京100007

出　　处：《环境技术》2023年第11期48-52,共5页Environmental Technology

摘　　要：本文介绍了人体模型、带电器件模型两种典型的静电放电模型,对人体模型、带电器件模型的区别、静电放电失效机理进行了说明。通过对芯片进行人体模型、带电器件模型静电放电极限测试,获取不同静电放电模型芯片失效电压及其失效特征。实验结果表明,芯片抵抗人体模型、带电器件模型静电放电的能力没有直接关系,并不是抵抗人体模型静电放电能力强,耐带电器件模型静电放电能力就高;人体模型、带电器件模型静电放电极限测试后芯片损伤位置、损伤形貌存在差异。This paper introduces two typical electrostatic discharge models:human body model and charged device model,and explains the difference between human body model and charged device model,as well as the failure mechanism of electrostatic discharge.The failure voltage and failure characteristics of chips with different ESD models are obtained by testing the ESD limit of human body models and charged device models.The experimental results show that the chip’s ability to resist the electrostatic discharge of the human body model and the charged device model is not directly related to the chip’s ability to resist the electrostatic discharge of the human body model;After ESD limit test of human body model and charged device model,there are differences in chip damage location and damage morphology.

关 键 词：静电放电 人体模型 带电器件模型 失效特征 失效机理 

分 类 号：TN306[电子电信—物理电子学]