Electrically function-switchable magnetic domain-wall memory  

作　　者：Yu Sheng Weiyang Wang Yongcheng Deng Yang Ji Houzhi Zheng Kaiyou Wang 

机构地区：[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《National Science Review》2023年第10期67-73,共7页国家科学评论（英文版）

基　　金：supported by the National Key Research and Development Program of China(2022YFA1405100);the Beijing Natural Science Foundation Key Program(Z190007);the National Natural Science Foundation of China(12241405 and12104449);the Chinese Academy of Sciences(QYZDYSSW-JSC020,XDPB44000000 and XDB28000000)。

摘　　要：Versatile memory is strongly desired for end users,to protect their information in the information era.In particular,bit-level switchable memory that can be switched from rewritable to read-only function would allow end users to prevent important data being tampered with.However,no such switchable memory has been reported.We demonstrate that the rewritable function can be converted into read-only function by applying a sufficiently large current pulse in a U-shaped domain-wall memory,which comprises an asymmetric Pt/Co/Ru/AlOx heterostructure with strong D zyaloshinskii-Moriya interaction.Wafer-scale switchable magnetic domain-wall memory arrays on 4-inch Si/SiO2 substrate are demonstrated.Furthermore,we confirm that the information can be stored in rewritable or read-only states at bit level according to the security needs of end users.Our work not only provides a solution for personal confidential data,but also paves the way for developing multifunctional spintronic devices.

关 键 词：SPINTRONICS spin orbit torques magnetic domain-wall SOT-MRAM information security 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]