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作 者:白清松 BAI Qingsong(Technology Research Developing Center,Chengdu Space on Electronics Corporation Ltd.,Chengdu 610037,CHN)
机构地区:[1]成都天奥电子股份有限公司技术研发中心,成都610037
出 处:《半导体光电》2023年第5期666-671,共6页Semiconductor Optoelectronics
基 金:国家自然科学基金项目(61871084);成都市重点研发项目(2022-CP02-00035-GX)。
摘 要:对半导体激光器外腔自反馈注入锁定进行了理论分析,研究了片上微腔的自反馈注入锁定对于分布反馈(DFB)激光器输出线宽的影响,分析了决定锁定带宽及线宽压缩系数的关键参数。基于Q值为2.4×10~6的片上Si_(3)N_(4)微腔的后向瑞利散射实现了DFB激光器的自反馈注入锁定,将其输出线宽由自由运转时的556.71 kHz压窄到了92.28 kHz,锁定带宽达到425 MHz。研究结果有助于理解半导体激光器自反馈注入锁定机理,并为实现窄线宽激光器提供了新的结构更简单、集成化潜力更高的方案。Theoretical analysis of the self-feedback injection locking of the external cavity of the semiconductor laser was carried out.The influence of the self-feedback injection locking of the on-chip microcavity on the output linewidth of the DFB(distributed feedback)laser was studied,and the key parameters determining the locking bandwidth and the linewidth compression factor were analyzed.Based on the back Rayleigh scattering of the on-chip Si_3N_(4)microcavity with a Q value of 2.4×10~6,the self-feedback injection locking of the DFB laser was realized.The line width is narrowed from 556.71 kHz during free-running to 92.28 kHz,and the locking bandwidth reaches 425 MHz.The research results contribute to the understanding of the self-feedback injection locking mechanism of semiconductor lasers and provide a new solution with simpler structure and higher integration potential for the realization of narrow linewidth lasers.
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