1064 nm低电压薄膜铌酸锂电光调制器  

Low-voltage Thin Film Lithium Niobate Electro-optic Modulator for 1064nm

作　　者：徐伟[1] 李志奇 郭翠娟[1] 白晋军[1] XU Wei;LI Zhiqi;GUO Cuijuan;BAI Jinjun(School of Electronics and Information Engineering,Tiangong University,Tianjin 300000,CHN)

机构地区：[1]天津工业大学电子与信息工程学院,天津300000

出　　处：《半导体光电》2023年第5期679-684,共6页Semiconductor Optoelectronics

基　　金：中国博士后科学基金面上基金项目(2019M661013);天津市科技计划项目(20YDTPJC01090,22YDTPJC00090)。

摘　　要：低半波电压电光调制器是实现大规模光电集成的关键。文章提出了一种半波电压低于1.5 V的薄膜铌酸锂马赫-曾德尔(Mach-Zehnder,MZ)电光调制器,选用绝缘体上单晶薄膜铌酸锂材料作为设计基础,分析了直波导、多模干涉耦合器、弯曲波导和调制臂等结构对电光调制器的影响。结果表明,当调制臂长为3 mm时,该薄膜铌酸锂电光调制器具有1.05 V的低半波电压、0.319 dB的低损耗和27 dB的高消光比。同时,该调制器半波电压长度积为0.315 V·cm,调制效率高,具有与CMOS技术兼容的半波电压,有利于大规模光电集成。The low half-wave voltage electro-optic modulator is crucial for achieving large-scale photonic integration.This article proposes a thin film lithium niobate Mach-Zehnder electro-optic modulator with a half-wave voltage below 1.5 V.The design is based on a single crystal thin film lithium niobate material on an insulator.The influence of the straight waveguide,multimode interference coupler,bent waveguide,and modulation arm on the electro-optic modulator is analyzed.The results show that when the length of the modulation arm is 3 mm,this thin film lithium niobate electro-optic modulator has a low half-wave voltage of 1.05 V,a low loss of 0.319 dB,and a high extinction ratio of 27 dB.At the same time,the modulator has a half-wave voltage-length product of 0.315 V·cm,high modulation efficiency,and a half-wave voltage compatible with CMOS technology,which is beneficial for large-scale photonic integration.

关 键 词：铌酸锂 马赫-曾德尔电光调制器 多模干涉耦合器 低半波电压 

分 类 号：TN761[电子电信—电路与系统]