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作 者:Haiyan Li Yuzhao Wang Fanqi Meng Wei Mao Xingzhong Cao Yi Bian Hao Zhang Yong Jiang Nuofu Chen Jikun Chen
机构地区:[1]Beijing Advanced Innovation Center for Materials Genome Engineering,School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China [2]School of Renewable Energy,North China Electric Power University,Beijing 102206,China [3]School of Materials Science and Engineering,Peking University,Beijing 100871,China [4]School of Engineering,The University of Tokyo,2-11-16 Yayoi,Bunkyo-ku,Tokyo 113-0032,Japan [5]Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China
出 处:《International Journal of Minerals,Metallurgy and Materials》2023年第12期2441-2450,共10页矿物冶金与材料学报(英文版)
基 金:financially supported by the National Key Research and Development Program of China(No.2021YFA0718900);National Natural Science Foundation of China(Nos.62074014,52073090,and 52103284)。
摘 要:The multiple quantum transitions within d-band correlation oxides such as rare-earth nickelates(RENiO_(3))triggered by critical temperatures and/or hydrogenation opened up a new paradigm for correlated electronics applications,e.g.ocean electric field sensor,bio-sensor,and neuron synapse logical devices.Nevertheless,these applications are obstructed by the present ineffectiveness in the thin film growth of the metastable RENiO_(3)with flexibly adjustable rare-earth compositions and electronic structures.Herein,we demonstrate a metal-organic decompositions(MOD)approach that can effectively grow metastable RENiO_(3)covering a large variety of the rare-earth composition without introducing any vacuum process.Unlike the previous chemical growths for RENiO_(3)relying on strict interfacial coherency that limit the film thickness,the MOD growth using reactive isooctanoate percussors is tolerant to lattice defects and therefore achieves comparable film thickness to vacuum depositions.Further indicated by positron annihilation spectroscopy,the RENiO_(3)grown by MOD exhibit large amount of lattice defects that improves their hydrogen incorporation amount and electron transfers,as demonstrated by the resonant nuclear reaction analysis and near edge X-ray absorption fine structure analysis.This effectively enlarges the magnitude in the resistance regulations in particular for RENiO_(3)with lighter RE,shedding a light on the extrinsic regulation of the hydrogen induced quantum transitions for correlated oxides semiconductors kinetically via defect engineering.
关 键 词:metal-insulator transition rare earth nickelates lattice defects hydrogen incorporation metal-organic decomposition
分 类 号:TB383.2[一般工业技术—材料科学与工程]
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