A review on GaN HEMTs:nonlinear mechanisms and improvement methods  

作　　者：Chenglin Du Ran Ye Xiaolong Cai Xiangyang Duan Haijun Liu Yu Zhang Gang Qiu Minhan Mi 

机构地区：[1]State Key Laboratory of Mobile Network and Mobile Multimedia Technology,Shenzhen 518055,China [2]Wireless Product Planning Department,ZTE Corporation,Shenzhen 518055,China [3]School of Microelectronics,Xidian University,Xi’an 710071,China

出　　处：《Journal of Semiconductors》2023年第12期31-46,共16页半导体学报（英文版）

基　　金：supported by the Shenzhen Science and Technology Program on Key Basic Research Project undergrant JCYJ20210324120409025;the National Natural Science Foundation of China under grant 61904135。

摘　　要：The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability.To ensure the quality of the communication signal,linearity is a key parameter during the system design.However,the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance,transconductance,channel transconductance etc.Among them,the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect,the increasing resistance of access region,the self-heating effect and the trapping effects.Based on the mechanisms,device-level improvement methods of transconductance including the trapping suppression,the nanowire channel,the graded channel,the double channel,the transconductance compensation and the new material structures have been proposed recently.The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

关 键 词：GaN HEMT linearity improvement transconductance reduction transconductance compensation nanowire channel graded channel 

分 类 号：TN386[电子电信—物理电子学]