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作 者:赵鹏 宋建军 张微[1,2] 承刚 张立生[1,2] 付春雷 石刚 黄存新 ZHAO Peng;SONG Jianjun;ZHANG Wei;CHENG Gang;ZHANG Lisheng;FU Chunlei;SHI Gang;HUANG Cunxin(Beijing Sinoma Synthetic Crystals Co.,Ltd.,Beijing 100018,China;Sinoma Synthetic Crystals Co.,Ltd.,Beijing 100018,China;Inner Mongolia Jinghuan Electronic Material Co.,Ltd.,Hohhot 010000,China)
机构地区:[1]北京中材人工晶体研究院有限公司,北京100018 [2]中材人工晶体研究院有限公司,北京100018 [3]内蒙古晶环电子材料有限公司,呼和浩特010000
出 处:《人工晶体学报》2023年第12期2203-2209,共7页Journal of Synthetic Crystals
基 金:国家重点研发计划(2022YFB3705900)。
摘 要:为保障我国相关国防重大工程对低吸收蓝宝石晶体材料的需求,本文通过自主研制的晶体生长设备,成功生长了低吸收蓝宝石晶体。该晶体在紫外、可见光、近-中红外波段展现出了良好的透过率,波长250~400 nm的透过率大于83%,波长400~4200 nm的透过率超过85%。在晶体不同区域进行取样表征测试,得到晶体的平均位错密度为253.19 cm^(-2),摇摆曲线对称且峰形尖锐,半峰全宽为14″。此外,值得注意的是,晶体在1064 nm处的光吸收系数均在(23.3~30.4)×10^(-6)cm^(-1),表明晶体内部的杂质元素得到有效控制,晶体光学性能优异,可用于高能激光系统、空间相机镜头等应用场景。In order to meet the demand for low-absorption sapphire crystal materials in important national defense projects in China,a self-produced crystal growth apparatus is developed in this study and the successful growth of low-absorption sapphire crystal can be achieved.The as-obtained crystal exhibits excellent transparency in the ultraviolet,visible,and near to midinfrared wavelength ranges.The transmittance is above 83% as the wavelength in the range of 250 nm to 400 nm,while the transmittance is above 85% as the wavelength in the range of 400 nm to 4200 nm.On the basis of the characterization tests conducted on different regions of the crystal,the average dislocation density of crystal can be determined as 253.19 cm^(-2).The rocking curve shows symmetrical and sharp peaks with a full width at half maximum of 14″.In addition,it is worth noting that the light absorption coefficient of crystal is(23.3~30.4)×10^(-6) cm^(-1) at the wavelength of 1064 nm,indicating that the impurity elements inside the crystal can be effectively controlled.Accordingly,the outstanding optical properties crystal can be applied in high-energy laser systems,space camera lenses and other relevant fields.
关 键 词:低吸收 泡生法 杂质元素 光吸收系数 透过率 位错密度
分 类 号:O78[理学—晶体学] TQ164[化学工程—高温制品工业]
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