原位合成Cr掺杂的SnO_(2)纳米墙及其乙炔气敏性能研究  

In Situ Growth of Cr Doped SnO_(2) Nanowalls and Their Gas Sensing Performance to Acetylene

作　　者：王思怡 于灵敏[1] 董天阳 李瑞君 WANG Siyi;YU Lingmin;DONG Tianyang;LI Ruijun(School of Materials Science and Chemical Engineering,Xi’an Technological University,Xi’an,710021)

机构地区：[1]西安工业大学材料与化工学院,西安710021

出　　处：《西安工业大学学报》2023年第6期553-560,共8页Journal of Xi’an Technological University

基　　金：国家自然科学基金项目(62171359)。

摘　　要：为了解决纯SnO_(2)基气体传感器对乙炔(C_(2)H_(2))工作温度高的难题,采用水热法对原位生长的SnO_(2)纳米墙进行不同摩尔比的金属铬(Cr)元素掺杂,研究了Cr掺杂对SnO_(2)纳米墙的形貌结构与气敏性能的影响。研究结果表明:当掺杂摩尔分数x(Cr)=3%时,制备的SnO_(2)纳米墙垂直于衬底方向定向生长,纳米片相互交联形成了三维立体多孔网络结构,为气体的吸附提供了活性位点和传输通道;与纯SnO_(2)纳米墙相比,掺杂摩尔分数x(Cr)=3%制备的SnO_(2)基气体传感器在检测质量分数w为2×10^(-4)的C_(2)H_(2)时,最佳工作温度由175℃降至125℃,响应值高达8.1,检测极限低至1×10^(-6),响应和恢复时间分别为165 s和80 s。结论可为研究低工作温度的C_(2)H_(2)传感器的制备及应用提供参考。The study aims to reduce the high working temperature of pure SnO_(2) based acetylene(C_(2)H_(2))gas sensor.SnO_(2) nanowall grown in situ was doped with chromium(Cr)at different molar ratios by the hydrothermal method,and the effect of Cr doping on the morphology,microstructure and gas sensing performance of SnO_(2) nanowall was investigated.The results show that when the molar fraction x(Cr)=3%,the doped SnO_(2) nanowalls grow perpendicular to the substrate,and the nanosheets are crosslinked to form a three dimensional porous network structure,which provides the active sites and transport channels for gas adsorption.Compared with pure SnO_(2) nanowalls,the optimal operating temperature of the SnO_(2) nanowalls gas sensors whose molar fraction x(Cr)=3%is decreased from 175℃to 125℃,the response value is up to 8.1,the detection limit is as low as 1×10^(-6),and the response and recovery times are 165 s and 80 s,respectively.This study will pave a way for the study of the preparation and application of C_(2)H_(2) sensors which work at low temperature.

关 键 词：CR掺杂 SnO_(2)纳米墙 气敏传感器 C_(2)H_(2) 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TQ221.242[自动化与计算机技术—控制科学与工程] TB383.1[化学工程—有机化工]