P-type cold-source field-effect transistors with TcX_(2) and ReX_(2)(X=S,Se)cold source electrodes:A computational study  

作　　者：汪倩文 武继璇 詹学鹏 桑鹏鹏 陈杰智 Qianwen Wang;Jixuan Wu;Xuepeng Zhan;Pengpeng Sang;Jiezhi Chen(School of Information Science&Technology,Qingdao University of Science&Technology,Qingdao 266000,China;School of Information Science and Engineering,Shandong University,Qingdao 266000,China)

机构地区：[1]School of Information Science&Technology,Qingdao University of Science&Technology,Qingdao 266000,China [2]School of Information Science and Engineering,Shandong University,Qingdao 266000,China

出　　处：《Chinese Physics B》2023年第12期54-60,共7页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos.62034006,92264201,and 62104134);the Natural Science Foundation of Shandong Province of China (Grant Nos.ZR2023QF076 and ZR2023QF054)。

摘　　要：Cold-source field-effect transistors(CS-FETs)have been developed to overcome the major challenge of power dissipation in modern integrated circuits.Cold metals suitable for n-type CS-FETs have been proposed as the ideal electrode to filter the high-energy electrons and break the thermal limit on subthreshold swing(SS).In this work,regarding the p-type CS-FETs,we propose TcX_(2) and ReX_(2)(X=S,Se)as the injection source to realize the sub-thermal switching for holes.First-principles calculations unveils the cold-metal characteristics of monolayer TcX_(2) and ReX_(2),possessing a sub-gap below the Fermi level and a decreasing DOS with energy.Quantum device simulations demonstrate that TcX_(2) and ReX_(2) can enable the cold source effects in WSe_(2) p-type FETs,achieving steep SS of 29-38 mV/dec and high on/off ratios of(2.3-5.6)×10^(7).Moreover,multilayer Re S2retains the cold metal characteristic,thus ensuring similar CS-FET performances to that of the monolayer source.This work underlines the significance of cold metals for the design of p-type CS-FETs.

关 键 词：cold metal steep-slope transistor subthreshold swing quantum device simulations 

分 类 号：TN386[电子电信—物理电子学]