β-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings  

作　　者：何启鸣 郝伟兵 李秋艳 韩照 贺松 刘琦 周选择 徐光伟 龙世兵 Qiming He;Weibing Hao;Qiuyan Li;Zhao Han;Song He;Qi Liu;Xuanze Zhou;Guangwei Xu;Shibing Long(School of Electronic and Information Engineering,Beihang University,Beijing 100191,China;School of Microelectronics,University of Science and Technology,Hefei 230026,China)

机构地区：[1]School of Electronic and Information Engineering,Beihang University,Beijing 100191,China [2]School of Microelectronics,University of Science and Technology,Hefei 230026,China

出　　处：《Chinese Physics B》2023年第12期73-79,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.61925110,U20A20207,62004184,62004186,and 62234007);the Key-Area Research and Development Program of Guangdong Province (Grant No.2020B010174002);the funding support from University of Science and Technology of China (USTC) (Grant Nos.YD2100002009 and YD2100002010);the Fundamental Research Plan (Grant No.JCKY2020110B010);Collaborative Innovation Program of Hefei Science Center,Chinese Academy of Sciences (Grant No.2022HSC-CIP024);the Opening Project of and the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS。

摘　　要：Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the vertical Schottky barrier diode(SBD)based onβ-Ga_(2)O_(3) has reached 5.45 MV/cm,and no device in any material has measured a greater before.However,the high electric field of theβ-Ga_(2)O_(3) SBD makes it challenging to manage the electric field distribution and leakage current.Here,we showβ-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings(FFRs).For the central anode,we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device.For the anode edge,experimental results have demonstrated that the produced NiO/β-Ga_(2)O_(3) heterojunction FFRs enable the spreading of the depletion region,thereby mitigating the crowding effect of electric fields at the anode edge.Additionally,simulation results indicated that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field.This work verified the feasibility of the heterojunction FFRs inβ-Ga_(2)O_(3) devices based on the experimental findings and provided ideas for managing the electric field ofβ-Ga_(2)O_(3) SBD.

关 键 词：gallium oxide Schottky barrier diode nickel oxide floating field rings 

分 类 号：TN311.7[电子电信—物理电子学]