Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications  

作　　者：周雨威 宓珉瀚 王鹏飞 龚灿 陈怡霖 陈治宏 刘捷龙 杨眉 张濛 朱青 马晓华 郝跃 Yuwei Zhou;Minhan Mi;Pengfei Wang;Can Gong;Yilin Chen;Zhihong Chen;Jielong Liu;Mei Yang;Meng Zhang;Qing Zhu;Xiaohua Ma;Yue Hao(School of Advanced Materials and Nanotechnology,Xidian University,Xi'an 710071,China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China)

机构地区：[1]School of Advanced Materials and Nanotechnology,Xidian University,Xi'an 710071,China [2]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Chinese Physics B》2023年第12期474-480,共7页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Project of China (Grant No.2021YFB3602404);part by the National Natural Science Foundation of China (Grant Nos.61904135 and 62234009);the Key R&D Program of Guangzhou (Grant No.202103020002);Wuhu and Xidian University special fund for industry-university-research cooperation (Grant No.XWYCXY-012021014-HT);the Fundamental Research Funds for the Central Universities (Grant No.XJS221110);the Natural Science Foundation of Shaanxi,China (Grant No.2022JM-377);the Innovation Fund of Xidian University (Grant No.YJSJ23019)。

摘　　要：Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.

关 键 词：InAlN/GaN rapid thermal annealing low voltage RF power performance terminal applications 

分 类 号：TN386[电子电信—物理电子学]