Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction  

作　　者：陈珊珊 张新昊 王广灿 陈朔 马和奇 孙天瑜 满宝元 杨诚 Shanshan Chen;Xinhao Zhang;Guangcan Wang;Shuo Chen;Heqi Ma;Tianyu Sun;Baoyuan Man;Cheng Yang(School of Physics and Electronics,Shandong Normal University,Jinan 250014,China;Institute of Materials and Clean Energy,Shandong Normal University,Jinan 250014,China;Shandong Provincial Engineering and Technical Center of Light Manipulations,Shandong Normal University,Jinan 250014,China)

机构地区：[1]School of Physics and Electronics,Shandong Normal University,Jinan 250014,China [2]Institute of Materials and Clean Energy,Shandong Normal University,Jinan 250014,China [3]Shandong Provincial Engineering and Technical Center of Light Manipulations,Shandong Normal University,Jinan 250014,China

出　　处：《Chinese Physics B》2023年第12期509-516,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.11874244 and 11974222)。

摘　　要：Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP_(2)S_(6)(CIPS)/semiconductor MoS_(2) van der Waals heterojunction.The ferroelectric hysteresis loop area was modulated by the optical field.Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer.The device was used as a photodetector in the OFF state but not in the ON state.The higher tunnelling electroresistance(~1.4×10^(4))in a lateral structured ferroelectric tunnelling junction was crucial,and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS_(2) Schottky junction.The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties.The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.

关 键 词：ferroelectric tunnelling junction metal/ferroelectric/semiconductor tunnelling electroresistance optoelectronic properties 

分 类 号：O469[理学—凝聚态物理]