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作 者:赵雪芹 董金瓯 张茹菲 杨巧林 谢玲凤 傅立承 顾轶伦 潘洵 宁凡龙 Xueqin Zhao;Jinou Dong;Rufei Zhang;Qiaolin Yang;Lingfeng Xie;Licheng Fu;Yilun Gu;Xun Pan;Fanlong Ning(Zhejiang Province Key Laboratory of Quantum Technology and Device and School of Physics,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon and Advanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China;Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;Science and Technology Innovation Center,Chifeng High-Tech Industrial Development Zone,Chifeng 025250,China)
机构地区:[1]Zhejiang Province Key Laboratory of Quantum Technology and Device and School of Physics,Zhejiang University,Hangzhou 310027,China [2]State Key Laboratory of Silicon and Advanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China [3]Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China [4]Science and Technology Innovation Center,Chifeng High-Tech Industrial Development Zone,Chifeng 025250,China
出 处:《Chinese Physics B》2023年第12期547-553,共7页中国物理B(英文版)
基 金:Project supported by the National Key Research and Development Program of China (Grant Nos.2022YFA1402701 and 2022YFA1403202);the National Natural Science Foundation of China (Grant No.12074333);the Key Research and Development Program of Zhejiang Province,China (Grant No.2021C01002)。
摘 要:We report the successful fabrication of a new 1111-type bulk magnetic semiconductor(La,Ba)(Zn,Mn)SbO through the solid solution of(La,Ba)and(Zn,Mn)in the parent compound LaZnSbO.The polycrystalline samples(La,Ba)(Zn,Mn)SbO crystallize into ZrCuSiAs-type tetragonal structure,which has the same structure as iron-based superconductor LaFeAsO_(1-δ).The DC magnetization measurements indicate the existence of spin-glass ordering,and the coercive field is up to~11500 Oe(1 Oe=79.5775 A·m^(-1)).The AC magnetic susceptibility further determines that the samples evolve into a conventional spin-glass ordering state below the spin freezing temperature T_(f).In addition,the negative magnetoresistance(MR≡[ρ(H)-ρ(0)]/ρ(0))reaches-88%under 9 T.
关 键 词:magnetic semiconductors SPIN-GLASS negative magnetoresistance
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