Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process  

作　　者：巩伟泰 李闫 孙亚宾 石艳玲 李小进 Wei-Tai Gong;Yan Li;Ya-Bin Sun;Yan-Ling Shi;Xiao-Jin Li(Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering,East China Normal University,Shanghai 200241,China)

机构地区：[1]Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering,East China Normal University,Shanghai 200241,China

出　　处：《Chinese Physics B》2023年第12期628-635,共8页中国物理B（英文版）

摘　　要：Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing gate oxide defects(ΔV_(HT)),and the generation of gate oxide defects(ΔV_(OT)).In this work,the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate(HKMG)process is thoroughly studied.The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature.The effects of the three underlying subcomponents are evaluated by using the comprehensive models.It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress.Moreover,the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted.The dependence of operating lifetime on stress bias and temperature is also discussed.It is observed that NBTI lifetime significantly decreases as the stress increases.Furthermore,the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.

关 键 词：negative bias temperature instability(NBTI) high-k metal gate(HKMG) threshold voltage shift interface trap gate oxide defect 

分 类 号：TN32[电子电信—物理电子学]