利用ZnCl_(2)原位钝化电子传输层提高量子点发光二极管性能  

Improving Performance of Quantum Dot Light-Emitting Diodes via In-Situ ZnCl_(2)Passivation of Electron Transport Layer

作　　者：王北恒 高懿韦 王艳林 曹松 余春燕[1,2] 翟光美[1,2] Wang Beiheng;Gao Yiwei;Wang Yanlin;Cao Song;Yu Chunyan;Zhai Guangmei(Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China;College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024 [2]太原理工大学材料科学与工程学院,太原030024

出　　处：《微纳电子技术》2023年第12期1928-1936,共9页Micronanoelectronic Technology

基　　金：山西省基础研究计划项目(202103021224055)。

摘　　要：在量子点发光二极管(QLED)中,电子-空穴注入不平衡和量子点层/电子传输层间界面的荧光猝灭限制着QLED效率的提升。基于此,采用金属卤化物(ZnCl_(2))原位处理电子传输层方法来减少氧化锌(ZnO)电子传输层的氧空位,同时有效钝化其表面不饱和键,因此在一定程度上实现抑制量子点/电子传输层界面的荧光猝灭和提高QLED中的电子-空穴注入平衡的目的,最终得到了高亮度、高效率的QLED。原位钝化处理后的ZnO基QLED的最大亮度、峰值电流效率、峰值功率效率和峰值外量子效率(EQE)分别从未处理QLED的176800 cd/m^(2)、9.86 cd/A、8.38 lm/W和7.42%提高到219200 cd/m^(2)、15.14 cd/A、12.66 lm/W和11.65%。结果表明,ZnCl_(2)原位钝化ZnO电子传输层对QLED性能的提升起到重要的作用。In quantum dot light-emitting diodes(QLEDs),the imbalance of electron-hole injection and the fluorescence quenching at the interface between the quantum dot layer and the electron transport layer limit the improvement of QLED efficiency.Based on this,an in-situ treatment method with metal halide(ZnCl_(2))was adopted to reduce the oxygen vacancies in the zinc oxide(ZnO)electron transport layer while effectively passivating unsaturated bonds on its surface.As a result,the fluorescence quenching at the interface between the quantum dot layer and the electron transport layer is suppressed,and the balance of electron-hole injection in QLEDs is improved to a certain extent.Ultimately,QLEDs with high brightness and high efficiency were obtained.The maximum luminance,peak current efficiency,peak power efficiency,and peak external quantum efficiency of ZnO-based QLEDs after in-situ passivation treatment with ZnCl_(2)are increased from 176800 cd/m^(2),9.86 cd/A,8.38 lm/W,and 7.42%of untreated QLEDs to 219200 cd/m^(2),15.14 cd/A,12.66 lm/W,and 11.65%,respectively.The results show that ZnCl_(2)in-situ passivation of ZnO electron transport layer plays an important role in improving the performances of QLEDs.

关 键 词：量子点发光二极管(QLED) ZNO 原位钝化 ZnCl_(2) 电子传输层 

分 类 号：TN312.8[电子电信—物理电子学]