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作 者:朱越 宋俊驰 王德波[1] Zhu Yue;Song Junchi;Wang Debo(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China)
机构地区:[1]南京邮电大学集成电路科学与工程学院,南京210023
出 处:《微纳电子技术》2023年第12期1982-1988,共7页Micronanoelectronic Technology
基 金:国家自然科学基金青年项目(61704086);中国博士后科学基金(2017M621692);江苏省博士后基金(1701131B);南京邮电大学国自基金孵化资助项目(NY215139,NY217039)。
摘 要:为了提升电容式微电子机械系统(MEMS)微波功率检测芯片的性能,针对典型的单悬臂梁结构,建立悬臂梁负载模型。根据有限元仿真验证结果,等效受力位置设置在悬臂梁与信号线交叠电容内侧边缘时,悬臂梁形变情况拟合度最高,相对误差仅11.42%。利用该模型分析了电容式MEMS微波功率检测芯片的过载功率、灵敏度以及温度特性等。实验结果表明,检测芯片在X波段范围内的回波损耗均小于-10 dB;在输入信号频率为10 GHz条件下,检测芯片的灵敏度为62.54 fF/W,而悬臂梁负载模型的灵敏度预测值为51.91 fF/W,与测试值相对误差仅为17.01%。因此,该理论模型对电容式MEMS悬臂梁微波功率检测芯片的设计具有一定的研究价值。To improve the performance of capacitive micro-electromechanical system(MEMS)microwave power detection chips,a cantilever beam load model was established for the classic single cantilever beam structure.According to the finite element simulation(FEM)verification results,when the equivalent force position is set at the inner edge of the overlapping capacitor between the cantilever beam and the signal line,the fitting degree of the deformation of the cantilever beam is the highest,and the relative error is only 11.42%.The model was used to analyze the overload power,sensitivity and temperature characteristics of the capacitive MEMS microwave power detection chip.The experimental results show that the return loss of the detection chip is less than-10 dB in the X-band range.At an input signal frequency of 10 GHz,the sensitivity of the detection chip is 62.54 fF/W,while the predicted sensitivity value of the cantilever beam load model is 51.91 fF/W,with a relative error of only 17.01%compared to the test value.Therefore,the theoretical model has certain research value for the design of capacitive MEMS cantilever microwave power detection chips.
关 键 词:微电子机械系统(MEMS) 微波功率检测芯片 悬臂梁 电容式 有限元法
分 类 号:TH703[机械工程—仪器科学与技术] TN43[机械工程—精密仪器及机械]
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