磁控溅射工作压强对β-Ga2O_(3)薄膜特性的影响  

Effect of Magnetron Sputtering Working Pressure on Properties ofβ-Ga_(2)O_(3)Thin Films

作　　者：段方 胡锐 Duan Fang;Hu Rui(Guizhou Zhenhua Feng Guang Semiconductor Co.Ltd.,Guiyang 550018,China)

机构地区：[1]贵州振华风光半导体股份有限公司,贵阳550018

出　　处：《微纳电子技术》2023年第12期2059-2064,共6页Micronanoelectronic Technology

摘　　要：作为新兴的第三代半导体材料,β-Ga_(2)O_(3)高质量薄膜是制备高效Ga_(2)O_(3)基器件的基础,β-Ga_(2)O_(3)薄膜的制备、表征及光电特性的研究具有深刻的意义。通过分析研究磁控溅射工作压强变化对薄膜性能和形貌的影响,为制备更高质量的薄膜提供了一种新的方法。基于射频磁控溅射方法,在单晶c面蓝宝石(Al_(2)O_(3))衬底上沉积生长Ga_(2)O_(3)薄膜,并进行900℃、90min的氮气退火处理,以得到β-Ga_(2)O_(3)薄膜。沉积过程不改变其他实验参数,仅改变工作压强,研究工作压强对β-Ga_(2)O_(3)薄膜特性的影响。X射线衍射仪(XRD)和原子力显微镜(AFM)表征结果显示,β-Ga_(2)O_(3)薄膜具有不同取向的衍射峰,沿着■晶向择优生长,薄膜呈多晶状态。适当增大工作压强可使β-Ga_(2)O_(3)薄膜内氧空位缺陷有效减少,从而提高薄膜结晶质量。但工作压强过高会增大Ar^(+)与靶材镓、氧原子团撞击概率,靶材原子团能量也将消耗,致使薄膜的结晶性能降低、生长速率下降。此外,工作压强对β-Ga_(2)O_(3)薄膜光学吸收特性的影响较大,总体而言,增大工作压强可提高β-Ga_(2)O_(3)薄膜紫外吸收特性。As a new third-generation semiconductor material,high qualityβ-Ga_(2)O_(3)thin films are the foundation for preparation of efficient Ga_(2)O_(3)-based devices,and research of preparation,characterization,and optoelectronic properties ofβ-Ga_(2)O_(3)thin films is of profound significance.By analyzing and studying the effects of working pressure variation of magnetron sputtering on the performance and morphology of the thin films,a new method was provided for the preparation of higher quality thin films.Based on radio frequency(RF)magnetron sputtering method,Ga_(2)O_(3)thin film was deposited and grown on single crystal c-plane sapphire(Al_(2)O_(3))substrate,and was annealed with nitrogen at 900℃for 90 min to obtainβ-Ga_(2)O_(3)thin film.The effect of working pressure on the properties ofβ-Ga_(2)O_(3)thin films was studied by changing the working pressure without changing other experimental parameters during deposition.Characterization results of X-ray diffractometer(XRD)and atomic force microscope(AFM)show that theβ-Ga_(2)O_(3)thin films have diffraction peaks of different orientations and preferred grow along the(201)crystal direction,and the thin films are polycrystalline.Oxygen vacancy defects inβ-Ga_(2)O_(3)thin films can be effectively reduced by increasing the working pressure properly,thus improving the crystal quality of the thin films.However,too high working pressure will increase the probability of Ar^(+)colliding with the target gallium and oxygen atomic groups,and the energy of the target atomic groups will also be consumed,resulting in the reductions of crystallization properties and growth rate of the thin film.In addition,the working pressure has a great influence on the optical absorption characteristics of theβ-Ga_(2)O_(3)thin films.In general,increasing the working pressure can improve the ultraviolet absorption characteristics ofβ-Ga_(2)O_(3)thin films.

关 键 词：Ga2O_(3) 射频(RF)磁控溅射 工作压强 结晶质量 紫外吸收特性 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055