银掺杂忆阻器的开关特性和限流调控  

Switching Characteristics and Current Limiting Modulation of Silver-Doped Memristors

作　　者：仉佳艺 赵思濛 杨一鸣 徐娇 唐灵芝 Zhang Jiayi;Zhao Simeng;Yang Yiming;Xu Jiao;Tang Lingzhi(School of Microelectronics,Dalian University of Technology,Dalian 116600,China)

机构地区：[1]大连理工大学微电子学院,辽宁大连116600

出　　处：《微纳电子技术》2023年第10期1691-1701,共11页Micronanoelectronic Technology

摘　　要：为了更好地通过低成本、易操作的方法获得性能优异的忆阻器,解决忆阻器在操作电压和循环次数等方面存在的问题,制备掺杂不同质量AgⅠ的前驱体溶液。采用低成本的低温旋涂工艺完成掺银功能层的制备,再采用蒸镀工艺实现基于Ag/Ag^(+)掺杂有机-无机杂化钙钛矿(OIHP)/氧化铟锡(ITO)的忆阻器的制备。掺杂70 mg AgⅠ的忆阻器与未掺杂忆阻器相比,开启电压由0.3 V降至0.13 V,循环次数提升了约20倍,高达100次以上。此外,通过限流调控,器件可同时实现多级存储功能、非易失阻变开关功能以及阈值选通功能,并且选通器双向阈值电压高度对称,开态电流达到100μA以上,泄漏电流在1 nA以下。该研究有效地优化了忆阻器的操作电压和循环次数。To obtain the memristor with excellent performance through low-cost and easy-tooperate methods,and solve the existing problems in operating voltage and cycle times of the memristor,precursor solutions doped AgI with different masses were prepared.The silver doped functional layer was prepared by low-cost low-temperature spinning coating process,and then the memristor based on Ag/Ag+doped organic-inorganic hybrid perovskite(OIHP)/indium tin oxid(ITO)was prepared through evaporation process.Compared with the undoped memristor,the turn-on voltage of the memristor doped with 70 mg AgI is reduced from 0.3 V to 0.13 V,and the cycle times is increased by about 20 times to more than 100 cycles.In addition,the device can simultaneously implement multi-stage memory functions,nonvolatile resistance switching functions and threshold gating functions by current limiting modulation.The bidirectional threshold voltage of the gate is highly symmetrical,the on-state current is more than 100μA,the leakage current is less than 1 nA.The research can effectively optimize the operating voltage and cycle times of the memristor.

关 键 词：钙钛矿薄膜 忆阻器 低温掺杂 限流调控 AgⅠ 

分 类 号：TN79[电子电信—电路与系统]