一种车用逆变器SiC MOSFET结温估计的Simulink建模方法  

A Simulink Modeling Method for Estimating Junction Temperature of SiC MOSFET for Vehicle Inverters

作　　者：彭琛 郑晓琦 闫国辉 PENG Chen;ZHENG Xiaoqi;YAN Guohui(Huatong Lisheng(Beijing)Intelligent Detection Group Co.,Ltd.,Jining 272000,China)

机构地区：[1]华通力盛(北京)智能检测集团有限公司,山东济宁272000

出　　处：《汽车电器》2023年第12期28-31,35,共5页Auto Electric Parts

摘　　要：目前,电动汽车高压平台已成为趋势,电机控制器功率器件由IGBT向SiC MOSFET转换,而针对SiC MOSFET结温的相关研究,很多学者曾提供了具体的理论公式,但是复杂的理论计算公式并不能很好地运用在实际开发过程中。文章基于以上现状,选择合适的SiC MOSFET热阻网络模型,将三阶RC网络通过基尔霍夫第一定律转化为时域的离散方程,进而建立Simulink模型,通过仿真及台架测试,测试结果显示能够满足预期目标。Currently,the high-voltage platform of electric vehicles has become a trend,and the power devices of motor controllers are converted from IGBT to SiC MOSFET.Many scholars have provided specific theoretical formulas for the junction temperature of SiC MOSFET,but complex theoretical calculation formulas cannot be well applied in the actual development process.Based on the above situation,the article selects a suitable SiC MOSFET thermal resistance network model,converts the third-order RC network into a discrete equation in the time domain through Kirchhoff's first law,and establishes a Simulink model.Through simulation and bench testing,the test results show that it can meet the expected goals.

关 键 词：SiC MOSFET 结温估计 热阻网络 电机控制 SIMULINK建模 

分 类 号：U464.13[机械工程—车辆工程]