基于OOMMF的各向异性磁阻传感器参数仿真  

Parameters simulation of AMR sensor based on OOMMF

作　　者：蒋琪 姜岩峰 JIANG Qi;JIANG Yanfeng(School of Internet of Things Engineering,Jiangnan University,Wuxi 214122,China)

机构地区：[1]江南大学物联网工程学院,江苏无锡214122

出　　处：《传感器与微系统》2024年第1期65-68,共4页Transducer and Microsystem Technologies

摘　　要：为了提高各向异性磁阻(AMR)传感器的性能,通过仿真模拟的方案来对传感器内部坡莫合金感应层的结构参数进行优化。利用OOMMF软件仿真坡莫合金薄膜的磁滞回线,使用控制变量法分别对薄膜取不同的厚度和长宽比时的性能进行分析。从仿真结果中的矫顽力、磁滞损耗等方面对比其磁学性能,并结合实际制备的薄膜表面粗糙度测试结果进行理论分析。最终,得到较为完整的坡莫合金薄膜结构参数来为AMR传感器性能优化提供理论依据。In order to improve the performance of anisotropic magnetoresistance(AMR)sensor,the structural parameters of permalloy sensing layer inside the sensor is optimized by simulation scheme.OOMMF software is used to simulate the hysteresis loop of film.And the properties of permalloy film with different thickness and aspect ratio are analyzed by using control variable method.Magnetic properties of the film are compared from the coercivity and hysteresis loss of the simulation results,and the theoretical analysis is carried out based on the measurement result of surface roughness of actual prepared thin film.Finally,a relatively complete permalloy film structure parameters is obtained to provide theoretical basis for the performance optimization of AMR sensor.

关 键 词：各向异性磁阻效应 坡莫合金 磁滞回线 OOMMF软件 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]