基于GaAs工艺的片上宽带功率分配器  

On-chip broadband power divider based on GaAs process

作　　者：李辰辰 高一强 孙晓玮[1] 钱蓉[1] 周健[1] 杨明辉[1] LI Chenchen;GAO Yiqiang;SUN Xiaowei;QIAN Rong;ZHOU Jian;YANG Minghui(Key Laboratory of Terahertz Solid State Technology,Shanghai Institute of Microsystems and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;School of Electronic and Information,Hangzhou Dianzi University,Hangzhou 310018,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所太赫兹固态技术重点实验室,上海200050 [2]中国科学院大学,北京100049 [3]杭州电子科技大学电子信息学院,浙江杭州310018

出　　处：《传感器与微系统》2024年第1期95-98,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(61731021)。

摘　　要：提出了一种基于砷化镓—集成无源器件(GaAs-IPD)工艺的宽带3dB功率分配器。使用多节级联以及集总参数等效的方法,实现了宽带小型化设计;使用RC串联隔离网络实现宽带内的高隔离性能。对提出的功分器进行了理论分析,并以20GHz为中心频率完成设计,电路尺寸为0.04λ0×0.053λ0,λ0为中心频率处的自由空间波长。经过测试,其相对工作带宽为80%,带内插损0.7dB,端口隔离高于20dB。测试结果与仿真结果保持了良好的一致性。A broadband 3 dB power divider based on GaAs-IPD process is proposed.A wideband miniaturized design is achieved using multi-section cascading and aggregate parameter equivalence method.High isolation performance within the wideband is achieved using an RC series isolation network.The proposed power divider is theoretically analyzed and the design is completed with a centre frequency of 20 GHz and a circuit size of 0.04λ_(0)×0.053λ_(0),withλ0 being the free-space wavelength at the center frequency.After testing,the relative operating bandwidth is 80%,the in-band insertion loss is 0.7 dB and the port isolation is higher than 20 dB.Test results maintain good agreement with the simulation results.

关 键 词：功率分配器 砷化镓工艺 宽带 集成无源器件 

分 类 号：TN626[电子电信—电路与系统]