利用吸合电极实现亚微米电极间隙的可制造性设计  

Design for manufacturability of submicron electrode gap using pull-in electrodes

作　　者：郑超越 孙珂 钟朋 王放 杨恒[1] ZHENG Chaoyue;SUN Ke;ZHONG Peng;WANG Fang;YANG Heng(State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology(SIMIT),Chinese Academy of Sciences(CAS),Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室,上海200050 [2]中国科学院大学,北京100049

出　　处：《传感器与微系统》2024年第1期103-106,110,共5页Transducer and Microsystem Technologies

摘　　要：提出一种利用吸合电极结构的可制造性设计手段,实现亚微米电极间隙的方法。利用静电力拉动可动电极位移实现超出光刻和刻蚀能力的超窄间隙,使得敏感电极间隙由1.3μm减小至300nm,通过该方法获得的亚微米电极间隙对工艺离散性不敏感,电极间隙的不一致性可以下降1个数量级。结合本文提出的I2BAR结构的可制造性设计方法,可以实现完整的微机电系统(MEMS)振荡器可制造性设计。A realization method for submicron electrode gap by using the manufacturability design of pull-in electrode structure is proposed.The movable electrode displacement is pulled by using electrostatic force,ultra narrow gaps beyond the lithography and etching ability are achieved,so that the sensitive electrode gap can be reduced from 1.3μm to 300 nm.The submicron electrode gap achieved by this method is not sensitive to the process dispersion,and the inconsistency of electrode gap can be reduced by an order of magnitude.Combined with the manufacturability design method of the proposed I2 BAR structure,a complete manufacturability design of MEMS oscillator can be realized.

关 键 词：吸合电极结构 可制造性设计 亚微米电极间隙 工艺离散性 微机电系统振荡器 

分 类 号：TN303[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]