GaAs PHEMT的I-V特性退化机理综述  

A review of the I-V characteristics degradation mechanism of GaAs PHEMT

作　　者：何述万 董濛 周虎 梁晓新[1,2] 周智勇 阎跃鹏 王魁松[1,2] HE Shuwan;DONG Meng;ZHOU Hu;LIANG Xiaoxin;ZHOU Zhiyong;YAN Yuepeng;WANG Kuisong(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Beijing Key Laboratory of New Generation Communication RF Chip Technology,Beijing 100029,China;Innovation Driven Development Center of the National Development and Reform Commission(Digital Economy Research and Development Center),Beijing 100045,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]新一代通信射频芯片技术北京市重点实验室,北京100029 [3]国家发展和改革委员会创新驱动发展中心(数字经济研究发展中心),北京100045

出　　处：《空间电子技术》2023年第6期64-74,共11页Space Electronic Technology

摘　　要：新一轮信息技术发展背景下,砷化镓赝调制高电子迁移率晶体管在射频通信中的应用值得关注,文章对其I-V特性的主要退化机理进行综述并提出性能优化的方向和措施。文章通过分析晶体管的层结构及层功能,推导晶体管的I-V特性方程,建立器件物理层面的参量与电路层级的参数之间的映射关系,以此寻找其阈值电压、漏源电流及跨导等性能参数的退化规律。为使性能退化过程的叙述条理清晰,文章将主要退化失效机理划分为结构缺陷、电热应力和环境因素三个方面。为舒缓减轻晶体管的退化失效程度,文章从结构材料、加工工艺和电路设计等方面探讨性能的改进空间和优化途径。In the context of a new round of information technology development,the application of GaAs pseudomorphic high electron mobility transistors in RF communication deserves attention.The article summarizes the main degradation mechanisms of their I-V characteristics and proposes the direction and measures for performance optimization.The article analyzes the layer structure and function of transistors,derives the I-V characteristic equation of transistors,establishes the mapping relationship between device physical level parameters and circuit level parameters,and seeks the degradation law of performance parameters such as threshold voltage,leakage source current,and transconductance.In order to provide a clear description of the performance degradation process,the article divides the main degradation failure mechanisms into three aspects:structural defects,thermal stress,and environmental factors.In order to alleviate the degree of degradation and failure of transistors,this article explores the space for performance improvement and optimization approaches from the aspects of structural materials,processing technology,and circuit design.

关 键 词：砷化镓 I-V特性 层结构 退化失效机理 工艺改进 

分 类 号：V443[航空宇航科学与技术—飞行器设计] TN386.3[电子电信—物理电子学]