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作 者:张丽萍 李佳妮 冯江旭 苏俊燕 Liping ZHANG;Jiani LI;Jiangxu FENG;Junyan SU(School of Sciences,Lanzhou University of Technology,Lanzhou 730050,People’s Republic of China)
机构地区:[1]School of Sciences,Lanzhou University of Technology,Lanzhou 730050,People’s Republic of China
出 处:《Plasma Science and Technology》2023年第12期24-30,共7页等离子体科学和技术(英文版)
基 金:funded by National Natural Science Foundation of China (No. 12065015);the Hongliu First-level Discipline Construction Project of Lanzhou University of Technology。
摘 要:Terahertz(THz) radiation can be generated due to the instability of THz plasma waves in field-effect transistors(FETs). In this work, we discuss the instability of THz plasma waves in the channel of FETs with spin and quantum effects under non-ideal boundary conditions. We obtain a linear dispersion relation by using the hydrodynamic equation, Maxwell equation and spin equation. The influence of source capacitance, drain capacitance, spin effects, quantum effects and channel width on the instability of THz plasma waves under the non-ideal boundary conditions is investigated in great detail. The results of numerical simulation show that the THz plasma wave is unstable when the drain capacitance is smaller than the source capacitance;the oscillation frequency with asymmetric boundary conditions is smaller than that under non-ideal boundary conditions;the instability gain of THz plasma waves becomes lower under non-ideal boundary conditions. This finding provides a new idea for finding efficient THz radiation sources and opens up a new mechanism for the development of THz technology.
关 键 词:the instability of THz plasma waves spin effects non-ideal boundary conditions quantum effects field-effect transistors
分 类 号:TN386[电子电信—物理电子学] O441.4[理学—电磁学]
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