硒化亚锗异质结太阳电池模拟研究  

Numerical simulation of germanium selenide heterojunction solar cell

作　　者：肖友鹏 王怀平[1,2] 冯林[1,2] Xiao You-Peng;Wang Huai-Ping;Feng Lin(Engineering Research Center of Nuclear Technology Application,Ministry of Education,East China University of Technology,Nanchang 330013,China;School of Mechanical and Electronic Engineering,East China University of Technology,Nanchang 330013,China)

机构地区：[1]东华理工大学,核技术应用教育部工程研究中心,南昌330013 [2]东华理工大学机械与电子工程学院,南昌330013

出　　处：《物理学报》2023年第24期332-342,共11页Acta Physica Sinica

基　　金：东华理工大学博士科研启动基金(批准号:DHBK2019170);江西省科技厅重点研发项目(批准号:20203BBE53030)资助的课题。

摘　　要：薄膜太阳电池技术中研究的热点之一是寻找能够替代碲化镉和铜铟镓硒的吸收层材料,近来具有优异材料和光电特性的硒化亚锗(germanium selenide,GeSe)进入了科研人员的视野.影响异质结太阳电池性能的主要是各功能层材料的材料特性和构筑的器件结构以及结构中异质结界面处的界面特性.本文以GeSe为吸收层,配备了性能稳定的无机材料TiO_(2)和Cu_(2)O分别作为太阳电池的电子输运层和空穴输运层,构筑了结构为FTO/TiO_(2)/GeSe/Cu_(2)O/Metal的异质结太阳电池.选用TiO_(2)和Cu_(2)O作为载流子输运层是因为两者分别与吸收层GeSe形成小的尖峰状的导带带阶和价带带阶,不会妨碍多子输运的同时能有效抑制界面处载流子的复合.接着利用wxAMPS软件模拟分析了有关功能层材料参数和异质结界面特性以及工作温度对太阳电池性能参数的影响,结合实际应用选定相关材料参数,优化后300 K温度下GeSe异质结太阳电池的开路电压Voc为0.752 V,短路电流Jsc为40.71 mA·cm^(-2),填充因子FF为82.89%,转换效率η为25.39%.研究结果表明结构为FTO/TiO_(2)/GeSe/Cu_(2)O/Au的太阳电池有成为高效、低毒和低成本的太阳电池的潜力,同时模拟分析也为设计和制备异质结太阳电池提供一定借鉴.One of the research hotspots in thin film solar cell technology is to seek the suitable absorber layer materials to replace cadmium telluride and copper indium gallium selenium.Recently,germanium selenide(GeSe)with excellent photoelectric property has entered the field of vision of photovoltaic researchers.The main factors affecting the performance of heterojunction solar cell are the material properties of each functional layer,the device configuration,and the interface characteristics at the heterostructure.In this study,we utilize GeSe as the absorber layer,and assemble it with stable TiO_(2)as electron transport layer and with Cu_(2)O as hole transport layer,respectively,into a heterojunction solar cell with the FTO/TiO_(2)/GeSe/Cu_(2)O/Metal structure.The TiO_(2)and Cu_(2)O can form small spike-like conduction band offset and valence band offset with the absorber layer,respectively,which do not hinder majority carrier transport but can effectively suppress carrier recombination at the heterointerface.Subsequently,the wxAMPS software is used to simulate and analyze the effects of functional layer material parameters,heterointerface characteristics,and operating temperature on the performance parameters of the proposed solar cell.Considering the practical application,the relevant material parameters are selected carefully.After being optimized at 300 K,the proposed GeSe heterojunction solar cell can reach an open circuit voltage of 0.752 V,a short circuit current of 40.71 mA·cm^(-2),a filling factor of 82.89%,and a conversion efficiency of 25.39%.It is anticipated from the results that the GeSe based heterojunction solar cell with a structure of FTO/TiO_(2)/GeSe/Cu_(2)O/Au has the potential to become a high-efficiency,low toxicity,and low-cost photovoltaic device.Simulation analysis also provides some references for designing and preparing the heterojunction solar cells.

关 键 词：硒化亚锗 二氧化钛 氧化亚铜 太阳电池 模拟 

分 类 号：TM914.4[电气工程—电力电子与电力传动]