p型TOPCon技术及其在高效晶体硅太阳电池应用的研究进展  

RESEARCH PROGRESS ON p-TYPE TOPCon TECHNOLOGY AND ITS APPLICATION IN HIGH-EFFICIENCY c-Si SOLAR CELLS

作　　者：曾俞衡[1] 林娜 刘伟[1] 闫宝杰 夏庆锋 叶继春[1] Zeng Yuheng;Lin Na;Liu Wei;Yan Baojie;Xia Qingfeng;Ye Jichun(Ningbo Institute of Materials Technology and Engineering,CAS,Ningbo 315201,China)

机构地区：[1]中国科学院宁波材料技术与工程研究所,宁波315201

出　　处：《太阳能》2023年第12期36-46,共11页Solar Energy

基　　金：宁波市“科技创新2025”专项(2022Z114、2020Z098);国家自然科学基金(61974178);中科院青年促进会(2018333);浙江省重点研发计划(2021C01006);辽宁省揭榜挂帅科技攻关(2021JH1/10400104)。

摘　　要：隧穿氧化硅钝化接触(TOPCon)晶体硅太阳电池被广泛认可为下一代高效太阳电池技术,n型TOPCon技术已成为当前新上生产线的主流方案。p型TOPCon技术虽然更加适合p型晶体硅太阳电池产业生态,却因其关键钝化接触性能提升困难、已有技术方案不适合量产等因素而发展缓慢。基于p型TOPCon技术的重要性,详细介绍了p型TOPCon技术的研究进展,并探讨了制约该技术钝化性能提升的关键科学问题。从国内外的研究结果来看,分别基于LPCVD技术及PECVD技术的p型TOPCon技术在钝化性能上均取得了进步,获得最高隐含开路电压(对应的最低单面饱和电流密度)分别达到737 mV(2 fA/cm^(2))和732 mV(约5 fA/cm^(2))的p型TOPCon结构,已初步显示出产业应用潜力。开发具有产业应用价值的p型TOPCon技术对晶体硅太阳电池产业的发展具有重要意义,值得全行业进一步深入研究。Tunneled silicon oxide passivation contact(TOPCon)c-Si solar cells are widely recognized as the next generation of efficient solar cell technology,and n-type TOPCon technology has become the mainstream solution for new production lines.Although the p-type TOPCon technology is more suitable for the p-type c-Si solar cell industry ecosystem,its development is slow due to factors such as difficulty in improving its key passivation contact performance and existing technical solutions not suitable for mass production.This paper is based on the importance of p-type TOPCon technology,providing a detailed introduction to the research progress of p-type TOPCon technology,and exploring the key scientific issues that constrain the improvement of passivation performance of this technology.From the research results at home and abroad,it can be seen that p-type TOPCon technology based on LPCVD technology and PECVD technology has made progress in passivation performance,achieving p-type TOPCon structures with the highest hidden open circuit voltage(corresponding to the lowest single-sided saturation current density)of 737 mV(2 fA/cm^(2))and 732 mV(approximately 5 fA/cm^(2)),respectively.This has preliminarily demonstrated the potential for industrial application.The development of p-type TOPCon technology with industrial application value is of great significance for the development of c-Si solar cell industry and deserves further in-depth research by the entire industry.

关 键 词：光伏发电 晶体硅太阳电池 p型隧穿氧化硅钝化接触 掺硼多晶硅 钝化性能 

分 类 号：TM615[电气工程—电力系统及自动化] TM914.41