新型微波介质陶瓷HoVO4  

New microwave dielectric ceramic HoVO_(4)

作　　者：张忠泉 陈丽[1] 李波[1,2,3] ZHANG Zhongquan;CHEN Li;LI Bo(School of Integrated Circuit Science and Engineering,University of Electronic Science andTechnology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu 610054,China;National Engineering Research Center of Electromagnetic Radiation Control Materials,Chengdu 610054,China)

机构地区：[1]电子科技大学集成电路科学与工程学院,成都610054 [2]电子薄膜与集成器件国家重点实验室,成都610054 [3]国家电磁辐射控制材料工程技术研究中心,成都610054

出　　处：《功能材料》2023年第12期12219-12224,共6页Journal of Functional Materials

摘　　要：采用固相法制备了新型微波介质陶瓷HoVO_(4)。研究了微波性能与微观形貌、致密度和拉曼半高宽之间的关系,并分析了拉曼光谱中化学键的振动模。HoVO_(4)在1150℃烧结得到最优微波介电性能:ε_(r)=11.52,Q×f=27271 GHz,τ_(f)=-22.39×10^(-6)/℃。选取正τf值的TiO_(2)与负τf值的HoVO_(4)进行复合,得到谐振频率温度系数近零的微波陶瓷,当TiO_(2)掺杂量为6%、烧结温度为1200℃时获得最佳微波介电性能为:ε_(r)=14.14,Q×f=18978 GHz,τ_(f)=2.4324×10^(-6)/℃。A new microwave ceramic material,HoVO_(4),was prepared by the solid state method.The relationships between dielectric properties,microstructure,density and FWHM were investigated,and the vibrational modes of chemical bonds in Raman spectra were analyzed.The HoVO_(4) sintered at 1150℃ shows excellent microwave dielectric properties:ε_(r)=11.52,Q×f=27271 GHz,τ_(f)=-22.39×10^(-6)/℃.Positive τ_(f )values of TiO_(2) were chosen to obtain microwave ceramics with near zeroτf by compounding with HoVO_(4).The optimum microwave dielectric properties obtained when TiO_(2) doping was 6wt% and sintering temperature was 1200℃ were:ε_(r)=14.14,Q×f=18978 GHz,τ_(f)=2.4324×10^(-6)/℃.

关 键 词：稀土 HoVO_(4) TiO_(2) 

分 类 号：TB34[一般工业技术—材料科学与工程]