Latest developments in EUV photoresist evaluation capability at Shanghai Synchrotron Radiation Facility  

作　　者：Zhen‑Jiang Li Cheng‑Hang Qi Bei‑Ning Li Shu‑Min Yang Jun Zhao Zhi‑Di Lei Shi‑Jie Zhu Hao Shi Lu Wang Yan‑Qing Wu Ren‑Zhong Tai 

机构地区：[1]Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201800,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Shanghai Synchrotron Radiation Facility,Shanghai 201204,China [4]ShanghaiTech University,Shanghai 201210,China [5]Key Laboratory of Materials for High Power Lasers,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China [6]College of Materials Science and Opto‑Electronic Technology,University of Chinese Academy of Sciences,Beijing 100083,China [7]Shanghai University,Shanghai 200444,China

出　　处：《Nuclear Science and Techniques》2023年第12期206-215,共10页核技术（英文）

基　　金：supported by the National Key Research and Development Program of China(Nos.2021YFA1601003,2017YFA0206002,2017YFA0403400);the National Natural Science Foundation of China(No.11775291)。

摘　　要：Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the Shanghai Synchrotron Radiation Facility(SSRF)08U1B beamline in advancing this field.Specifically,it demonstrates how this beamline can create fringe patterns with a 15-nm half-pitch on a resist using synchrotron-based EUV lithography.This achievement is vital for evaluating EUV photoresists at the advanced 5-nm node.We provide a detailed introduction to the methods and experimental setup used at the SSRF 08U1B beamline to assess an EUV photoresist.A significant part of this research involved the fabrication of high-resolution hydrogen silsesquioxane mask gratings.These gratings,with an aspect ratio of approximately 3,were created using electron beam lithography on an innovative mask framework.This framework was crucial in eliminating the impact of zeroth-order light on interference patterns.The proposed framework propose offers a new approach to mask fabrication,particularly beneficial for achromatic Talbot lithography and multicoherent-beam interference applications.

关 键 词：Extreme ultraviolet photoresist Interference lithography HIGH-RESOLUTION Electron beam lithography·Hydrogen silsesquioxane GRATING 

分 类 号：TN405[电子电信—微电子学与固体电子学]