Influence of Parasitic Parameters on Dynamic Threshold Voltage Hysteresis of Silicon Carbide MOSFETs  

作　　者：Yumeng Cai Tong Sun Peng Sun Zhibin Zhao Xuebao Li Hui Wang Zhong Chen Boyuan Cao 

机构地区：[1]the State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University,Beijing 102206,China [2]the Department of Electrical Engineering,University of Arkansas,Fayetteville,AR 72701,USA [3]the Electric Power Research Institute,State Grid Shanghai Electric Power Company,Shanghai 200437,China

出　　处：《CSEE Journal of Power and Energy Systems》2023年第6期2251-2262,共12页中国电机工程学会电力与能源系统学报（英文）

基　　金：the Science andTechnology Project of State Grid Corporation of China (No. 52094021N012).

摘　　要：Threshold voltage (V_(TH)) hysteresis affects the dynamic characteristics of silicon carbide (SiC) MOSFETs, whichin turn affects reliability of a device. In this paper, a dynamichysteresis curve is proposed as an evaluation method of theinfluence of V_(TH) hysteresis on the switching characteristics ofSiC MOSFETs. This method can eliminate the impact of triggerlevel and obtain the dynamic V_(TH). Furthermore, the influence ofparasitic parameters on dynamic V_(TH) hysteresis is theoreticallyanalyzed. Double pulse tests under different parasitic parametersare performed on three SiC MOSFETs with different gatestructures to verify the analysis. Results show that gate resistance(R_(G)) and source inductance (L_(S)) have more significant effectson dynamic V_(TH) hysteresis compared with gate inductance anddrain inductance. V_(TH) hysteresis phenomenon weakens withincrease of R_(G) or L_(S), which is related to device structure.The results presented in this paper can provide guidance forthe design of circuit parasitic parameters of SiC MOSFETs toregulate V_(TH) hysteresis.

关 键 词：Dynamic hysteresis curve parasitic parameters silicon carbide(SiC)MOSFETs switching characteristics threshold voltage hysteresis 

分 类 号：TM73[电气工程—电力系统及自动化]