SiC JFETs Modular Cascaded Method with Active Clamp Control Strategy for DC Solid-state Circuit Breaker  

作　　者：Hong Duan Wei Wang Zhikang Shuai Dong He Daixin Chen Z.John Shen 

机构地区：[1]the College of Electrical and Information Engineering,Hunan University,Changsha 410006,China [2]the Department of Electrical and Computer Engineering,Illinois Institute of Technology,Chicago,IL 60616 USA.

出　　处：《CSEE Journal of Power and Energy Systems》2023年第6期2435-2446,共12页中国电机工程学会电力与能源系统学报（英文）

基　　金：the National Natural Science Foundation of China under Grant(52125705,51977066);the Hunan Provincial Natural Science Foundation of China(2020JJ5056).

摘　　要：Power semiconductor devices cascaded topology is one of the most common solutions for solid-state circuit breakers(SSCBs)working in medium-voltage DC systems.However,when the number of cascaded devices is large,current series technologies of power semiconductor devices will be difficult to be applied since with uneven voltage sharing problems.Thus,this paper proposes a novel cascade method of multi-SiC JFETs based on modules cascaded.This method consists of two parts:one is a single-gate driver cascaded SiC JFETs topology which is used to form the module,the other one is an active clamp control strategy which ensures that each module is protected from overvoltage when modules are cascaded.The proposed cascade method can effectively suppress voltage overshoot of cascading power devices in the switching process.Based on the proposed cascade method,a 5kV/63A SSCB prototype is designed.Finally,an experiment is conducted based on the designed SSCB.Experimental results validate the effectiveness of the proposed cascaded method for SSCB.

关 键 词：Active control CLAMP DC solid-state circuit breaker MODULAR SiC JFETs series connection 

分 类 号：TM571[电气工程—电器] TM561