基于硅/二维层状材料异质结的红外光电探测器研究进展  

Research Progress on Heterojunction Infrared Photodetectors Based on Silicon/Two-dimensional Layered Materials

作　　者：贺亦菲 杨德仁[1,2] 皮孝东 HE Yifei;YANG Deren;PI Xiaodong(State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China)

机构地区：[1]浙江大学材料科学与工程学院硅材料国家重点实验室,杭州310027 [2]浙江大学杭州国际科创中心,杭州311200

出　　处：《材料导报》2024年第1期1-9,共9页Materials Reports

摘　　要：红外光是一种频率介于微波和可见光范围之间的电磁波,在光通信、人工智能、医用治疗、军事探测和航空航天等领域具有广泛的应用。硅的带隙为1.12 eV,导致硅基光电探测器的截止波长短(约1.1 mm)。近年来,研究发现了新型二维层状材料,它们具有带隙可调、载流子迁移率高、光谱响应宽、暗电流低、稳定性高以及制备工艺与互补金属氧化物半导体(Complementary metal oxide semiconductor, CMOS)工艺兼容等诸多优点,引起了研究人员的广泛关注。通过将硅与二维层状材料结合,能够有效地将硅基光电探测器的探测波段向波长超过1.1 mm的红外光波段拓展。本文着重介绍了近年来可探测波长超过传统硅光电探测器的基于硅/二维层状材料异质结的光电探测器在近红外和中红外光波段的研究进展并展望了其发展前景。Infrared light,an electromagnetic wave with a frequency range that lies between that of microwave and visible light,is widely used in the fields of optical communication,artificial intelligence,medical treatment,military detection,and aerospace.Infrared light is difficult to detect because it is invisible to the human eye.The cutoff wavelength(about 1.1 mm)of silicon-based photodetectors are limited by the bandgap of silicon(about 1.12 eV).In recent years,researchers have discovered novel two-dimensional layered materials with a tunable bandgap,high carrier mobility,wide spectral response,low dark current,and high stability.Additionally,their micro-nano processing technology is compatible with CMOS technology.Combining silicon with two-dimensional layered materials can efficiently expand the detection band of silicon photodetectors to the infrared light band with wavelengths exceeding 1.1 mm.In this review,we focus on the current reports related to silicon/two-dimensional layered materials heterojunctions.We introduce the application of silicon heterojunction infrared photodetectors with two-dimensional materials,such graphene,black phosphorus,and two-dimensional transition metal chalcogenides;we also present the performance of these devices.Finally,based on recent research,the outlook on heterojunction infrared photodetectors based on silicon/two-dimensional layered material is presented.It is believed that heterojunction infrared photodetectors based on silicon/two-dimensional material have the potential to realize advanced applications in the future.

关 键 词：硅 二维层状材料 异质结 红外光电探测器 

分 类 号：TN215[电子电信—物理电子学]