Ⅱ-Ⅵ族多元化合物半导体晶体生长及器件研究进展  

Research Progress in Crystal Growth and Devices of Group Ⅱ-Ⅵ Multicomponent Compound Semiconductors

作　　者：杨桂芝 俞鹏飞 张嘉伟 介万奇[2,3] YANG Guizhi;YU Pengfei;ZHANG Jiawei;JIE Wanqi(School of Materials Science and Engineering,Chang'an University,Xi'an 710064,China;State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an 710072,China;Key Laboratory of Radiation Detection Materials and Devices(MIIT),Northwestern Polytechnical University,Xi'an 710072,China)

机构地区：[1]长安大学材料科学与工程学院,陕西西安710064 [2]西北工业大学凝固技术国家重点实验室,陕西西安710072 [3]西北工业大学辐射探测材料与器件工信部重点实验室,陕西西安710072

出　　处：《铸造技术》2023年第12期1075-1093,共19页Foundry Technology

基　　金：西北工业大学凝固技术国家重点实验室开放课题(SKLSP202318);陕西省重点研发计划(2022GY-358)。

摘　　要：Ⅱ-Ⅵ族多元(三元及三元以上)化合物半导体晶体是一类非常重要的光电子材料,多为闪锌矿结构,具有直接跃迁型能带结构。可以通过掺入不同的杂质获得n型或者p型半导体晶体材料。这些晶体具有原子序数大、电阻率高、载流子迁移率寿命积大、光吸收系数好等特点,可用于室温辐射探测器、太阳能电池、法拉第磁性器件等领域。本文介绍了Ⅱ-Ⅵ族多元化合物半导体晶体的结构和物理性质,结合生长方法综述了晶体生长的研究进展,分析讨论了器件的主要应用,并展望了该类晶体材料未来的发展方向。Group Ⅱ-Ⅵ multicomponent(ternary and more than ternary)compound semiconductor crystals are a very important class of optoelectronic materials.Most of them are sphalerite structures with direct transition type band gaps.The n-type or p-type semiconductor crystal materials can be obtained by doping with different impurities.These crystals have the characteristics of a large atomic number,high resistivity,large carrier mobility lifetime product,good light absorption coefficient,etc.,and can be used in room temperature radiation detectors,solar cells,Faraday magnetic devices and other fields.In this paper,the structure and physical properties of group Ⅱ-Ⅵ multicomponent compound semiconductor crystals are introduced,and the research progress of crystal growth is reviewed in combination with growth methods.The main applications of the devices are analysed and discussed,and the future development direction of this class of crystal materials is proposed.

关 键 词：Ⅱ-Ⅵ族多元化合物 半导体 晶体生长 室温辐射探测器 太阳能电池 

分 类 号：TN304[电子电信—物理电子学]