Defect-induced electron rich nanodomains in CoSe_(0.5)S_(1.5)/GA realize fast ion migration kinetics as sodium-ion capacitor anode  

作　　者：Tianlin Li Danyang Zhao Binghui Du Qing Yin Yongzhi Li Xiaolan Xue Fuxiang Wei Jiqiu Qi Yanwei Sui 

机构地区：[1]China University of Mining and Technology,Xuzhou 221116,Jiangsu,China [2]Jiangsu Province Engineering Laboratory of High-Efficient Energy Storage Technology and Equipment,School of Materials Science and Physics,China University of Mining and Technology,Xuzhou 221116,Jiangsu,China

出　　处：《Journal of Energy Chemistry》2023年第12期583-593,I0014,共12页能源化学（英文版）

基　　金：financially supported by the National Nature Science Foundation of China(No.52202335);Natural Science Foundation of Jiangsu Province(No.BK20221137,BK20221139)。

摘　　要：Optimizing charge migration and alleviating volume expansion in anode materials are the key to improve the electrochemical performance for sodium-ion storage devices.Herein,a hierarchical porous conducting matrix confining defect-rich selenium doped cobalt dichalcogenide(CoSe_(0.5)S_(1.5)/GA)is constructed as a promising SICs anode based on the guidance of theoretical calculation analysis.The increased defect concentration significantly enhanced the disorder degree of the compound and presented electron aggregation around the S atoms,which effectively modulated the electronic structure,further enabling high rate and ultra-capacity sodium storage.Moreover,strong interfacial coupling could construct spatial constraint to alleviate volume expansion as well as maintain electrode integrity and stability.The CoSe_(0.5)S_(1.5)/GA electrode can deliver a high capacity of 310.1 mA h g^(-1)after 2000 cycles at 1 A g^(-1),and the CoSe_(0.5)S_(1.5)/GA//AC sodium ion capacitor can exhibit an outstanding energy density of 237.5 W h kg^(-1).A series of characterization and theoretical calculation convincingly reveal that the defect moieties can regulate the Na^(+)storage and diffusion kinetics,which prove that our defect manufacture coupling with space-confined strategy can provide deep insights into the development of high-performance Na^(+)storage devices.

关 键 词：Sodium-ion capacitors Defect manufacture Electron accumulation Carrier kinetic 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TM53[电气工程—电器]